MT47H64M8CB-37E IT:B TR

The MT47H64M8CB-37E IT:B TR is a 512 Mbit DDR2 SDRAM organized as 64M × 8 with a parallel memory interface in a 60-ball FBGA package. It implements DDR2 architecture with features such as DLL, on-die termination and selectable burst lengths to support synchronous memory designs.

Targeted for systems requiring industrial-temperature operation and board-level DDR2 memory capacity, this Micron Technology device delivers a 1.7–1.9 V operating range, a 267 MHz clock frequency, and industrial temperature support (–40°C to 95°C TC).

Key Features

• DDR2 SDRAM core 4n-bit prefetch architecture with programmable CAS latency and posted CAS additive latency for synchronous read/write timing control.
• Memory organization & capacity 512 Mbit capacity configured as 64M × 8 with 4 internal banks for concurrent operation.
• Performance & timing Specified clock frequency of 267 MHz and an access time of 500 ps. Speed grade -37E corresponds to a 3.75 ns cycle time (DDR2-533) at CL = 4 as defined in the datasheet.
• Interface & data timing JEDEC-standard 1.8 V I/O (SSTL_18-compatible) with differential data strobe (DQS/DQS#) option and DLL to align DQ and DQS with CK. Selectable burst lengths of 4 or 8.
• Signal integrity & drive On-die termination (ODT) and adjustable data-output drive strength to support signal integrity on board-level DDR2 buses. Duplicate output strobe (RDQS) option available for x8 configuration.
• Power Low-voltage operation with VDD = 1.8 V ±0.1 V and VDDQ = 1.8 V ±0.1 V (documented supply range 1.7 V – 1.9 V).
• Refresh & reliability 64 ms refresh interval with 8,192-cycle refresh count to maintain data integrity in DRAM arrays.
• Package & temperature 60-FBGA (60-ball FBGA) package with industrial temperature option: specified operating temperature range –40°C to 95°C (TC).
• Standards & compliance RoHS compliant (per datasheet) and supports JEDEC clock jitter specification.

Typical Applications

• Industrial embedded systems — Memory expansion where extended temperature range (–40°C to 95°C TC) is required for reliable operation.
• Board-level DDR2 memory modules — Compact 60-ball FBGA footprint for integration into systems using parallel DDR2 SDRAM interfaces.
• Legacy DDR2 designs — Replacement or population of DDR2 memory on designs that use 1.8 V SSTL_18-compatible I/O and require 512 Mbit density.

Unique Advantages

• Industrial temperature support: The specified –40°C to 95°C (TC) range enables use in temperature-challenging environments.
• Compact BGA packaging: 60-ball FBGA reduces PCB footprint while providing a standard ball-grid format for board assembly.
• DDR2 timing flexibility: Programmable CAS latency, DLL alignment, and selectable burst lengths allow tuning for system timing and throughput requirements.
• Signal integrity features: On-die termination and adjustable drive strength help manage signal integrity on high-speed parallel buses.
• Low-voltage operation: 1.7–1.9 V supply range and JEDEC 1.8 V I/O compatibility support low-voltage system designs.
• Manufacturer pedigree: Part of Micron’s 512 Mb DDR2 SDRAM family with documented options and timing grades in the datasheet.

Why Choose MT47H64M8CB-37E IT:B TR?

The MT47H64M8CB-37E IT:B TR provides a compact, industrial-temperature rated 512 Mbit DDR2 SDRAM solution with standard 1.8 V I/O, on-die termination, DLL timing control and selectable burst modes. Its combination of 64M × 8 organization, 60-FBGA packaging and documented timing grades makes it suitable for embedded and board-level designs that require a proven DDR2 memory component from Micron.

This device is appropriate for engineers specifying 1.8 V parallel DDR2 memory at the 512 Mbit density who need configurable timing, signal integrity options and industrial temperature range for long-term, robust deployment.

Request a quote or submit a sales inquiry to obtain pricing and availability for the MT47H64M8CB-37E IT:B TR for your next design or production run.