MT47H64M8CB-3:B TR

The MT47H64M8CB-3:B TR is a 512 Mbit DDR2 SDRAM organized as 64M × 8 with a parallel memory interface in a 60-ball FBGA package. It implements DDR2 architecture with a 4n-bit prefetch and supports programmable CAS latency and selectable burst lengths.

This device targets designs that require a compact parallel DDR2 memory element operating from a 1.7 V to 1.9 V supply and supporting commercial operating temperatures (0 °C to 85 °C). Key value propositions include JEDEC-standard 1.8 V I/O compatibility, on-die termination, and features that support common DDR2 timing and interface requirements.

Key Features

• Memory Core  512 Mbit DDR2 SDRAM organized as 64M × 8 with 4 internal banks for concurrent operation.
• DDR2 Architecture  4n-bit prefetch architecture with DLL to align DQ and DQS transitions with CK; programmable CAS latency and posted CAS additive latency.
• Interface & Timing  Parallel DDR2 interface with JEDEC-standard 1.8 V I/O (SSTL_18-compatible); selectable burst lengths of 4 or 8 and WRITE latency defined relative to READ latency.
• Performance  Clock frequency referenced at 333 MHz (device spec), access time ~450 ps and word/page write cycle time of 15 ns.
• Power  Vdd and VddQ supply range of 1.7 V to 1.9 V (Vdd = +1.8 V ±0.1 V as per datasheet).
• Signal Integrity  On-die termination (ODT) and adjustable data-output drive strength options to assist signal integrity on parallel interfaces.
• Reliability & Refresh  Standard 8,192-cycle (8K) refresh with 64 ms refresh interval support.
• Package & Temperature  60-ball FBGA (60-FBGA) mounting in a compact ball grid format; commercial operating temperature 0 °C to 85 °C (TC).

Typical Applications

• Parallel DDR2 Memory Subsystems  Provides 512 Mbit DDR2 in a 60-FBGA footprint for systems that require a parallel SDRAM interface and JEDEC-standard 1.8 V I/O.
• Embedded Systems  Used where a compact, volatile DDR2 memory element is required at commercial operating temperatures (0 °C to 85 °C).
• Legacy DDR2 Designs  Suitable for designs that implement DDR2 timing profiles including programmable CAS latency and selectable burst lengths.

Unique Advantages

• JEDEC-standard 1.8 V I/O: Ensures compatibility with SSTL_18-compatible systems using a 1.7 V–1.9 V supply range.
• Compact FBGA Package: 60-ball FBGA provides a space-efficient mounting option for board-level integration.
• Flexible Timing: Programmable CAS latency, additive latency, and selectable burst lengths (4 or 8) enable timing optimization for various DDR2 data rates.
• Signal and Drive Options: On-die termination and adjustable data-output drive strength support improved signal integrity on parallel buses.
• Refresh and Bank Architecture: 4 internal banks plus standard 8K refresh support concurrent operation and standard refresh management.

Why Choose IC DRAM 512MBIT PARALLEL 60FBGA?

The MT47H64M8CB-3:B TR positions itself as a straightforward 512 Mbit DDR2 SDRAM option for designs needing a parallel DDR2 memory device in a 60-FBGA package. Its JEDEC-standard 1.8 V I/O, on-die termination, and programmable timing features provide a clear match for systems that rely on standard DDR2 signaling and timing.

This device is well suited to engineers and procurement teams specifying commercial-temperature DDR2 memory with defined electrical and timing characteristics (1.7 V–1.9 V supply, 333 MHz reference clock frequency, 64M × 8 organization). It delivers predictable DDR2 behavior and compact packaging for integration into space-constrained, parallel-memory architectures.

If you need pricing, availability, or a formal quote for MT47H64M8CB-3:B TR, submit a request and include required quantity and target lead-time to receive a detailed response.