MT47H64M8CB-25:B TR

The MT47H64M8CB-25:B TR is a 512 Mbit DDR2 SDRAM organized as 64M × 8 with a parallel memory interface in a 60-ball FBGA package. It implements DDR2 SDRAM architecture with features from the Micron 512Mb family, targeting systems that require synchronous DDR2 memory in a compact FBGA footprint.

Key attributes include a 400 MHz clock frequency (400 ps access time), a nominal supply range of 1.7 V to 1.9 V, and an operating temperature range of 0 °C to 85 °C, delivering standard DDR2 functionality suitable for designs needing 512 Mbit volatile storage with programmable timing options.

Key Features

• Core / Memory Architecture 512 Mbit DDR2 SDRAM organized as 64M × 8 with 4 internal banks and a 4n-bit prefetch architecture.
• Performance & Timing Rated for a 400 MHz clock frequency with 400 ps access time; supports programmable CAS latency and selectable burst lengths of 4 or 8.
• Interface & Timing Support JEDEC-standard 1.8 V I/O (SSTL_18-compatible) with options for differential data strobe (DQS/DQS#) and duplicate output strobe (RDQS) for x8 configurations; includes DLL to align DQ and DQS with CK.
• Power Nominal supply voltages Vdd and VddQ at +1.8 V ±0.1 V (documented supply range 1.7 V to 1.9 V).
• Signal Integrity & Drive On-die termination (ODT) and adjustable data-output drive strength to support system signal integrity tuning.
• Refresh & Reliability 8,192-cycle refresh with a 64 ms refresh interval and support for standard self-refresh modes.
• Package & Temperature Supplied in a 60-ball FBGA package with an operating temperature range of 0 °C to 85 °C (commercial temperature grade).

Typical Applications

• Parallel-memory systems Provides 512 Mbit of DDR2 SDRAM organized as 64M × 8 for designs that require a parallel DDR2 memory interface in a 60-FBGA package.
• Compact embedded platforms Compact FBGA packaging and low-voltage operation (1.7 V–1.9 V) suit space-constrained systems needing synchronous DRAM.
• Timing-sensitive designs Programmable CAS latency, selectable burst lengths, and DLL alignment support designs that require controlled memory timing.

Unique Advantages

• DDR2 architecture with 4 internal banks: Enables concurrent bank operation and standard DDR2 prefetch operation for predictable data throughput behavior.
• 400 MHz clock rating with 400 ps access time: Clear timing specification for system timing budgets and interface planning.
• Low-voltage operation: Vdd/VddQ at +1.8 V ±0.1 V (documented range 1.7 V–1.9 V) reduces platform supply requirements compared with higher-voltage memories.
• Signal integrity features: On-die termination and adjustable output drive strength help simplify routing and termination choices on high-speed boards.
• Compact FBGA package: 60-ball FBGA provides a small footprint option for designs with constrained PCB area.
• Documented timing options: Programmable CAS latencies and selectable burst lengths allow designers to match memory timing to system needs.

Why Choose MT47H64M8CB-25:B TR?

The MT47H64M8CB-25:B TR offers a documented DDR2 SDRAM solution delivering 512 Mbit of volatile memory in a 60-ball FBGA package, with explicit electrical and timing parameters (400 MHz clock frequency, 400 ps access time, and 1.7 V–1.9 V supply range). Its combination of programmable latency, on-die termination, and adjustable output drive strength supports designs that require predictable DDR2 timing and signal integrity control.

This device is suitable for engineers specifying a compact parallel DDR2 memory component with commercial temperature range requirements and clear datasheet-backed parameters for integration and system timing validation.

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