MT47H64M8B6-37E:D TR

The MT47H64M8B6-37E:D TR is a 512 Mbit DDR2 SDRAM device organized as 64M × 8 with a parallel memory interface in a 60‑ball FBGA package. It implements DDR2 SDRAM architecture with a 4n‑bit prefetch and internal DLL for aligned data and strobe timing.

This device is suited for designs that require a 512 Mbit DDR2 memory component operating at commercial temperatures, providing configurable timing (CAS latency and burst length) and low‑voltage operation for system memory applications where a compact FBGA package and JEDEC‑compatible I/O are required.

Key Features

• Core / Memory Architecture 512 Mbit DDR2 SDRAM organized as 64M × 8 with 4 internal banks and 4n‑bit prefetch architecture.
• Performance & Timing Supports programmable CAS latency and selectable burst lengths (BL = 4 or 8). Target clock frequency listed at 267 MHz with a 500 ps access time and 15 ns write cycle time (word page).
• Power Low‑voltage operation with VDD/VDDQ range of 1.7 V to 1.9 V (nominal 1.8 V).
• Interface & Signal Integrity JEDEC‑standard 1.8 V I/O (SSTL_18‑compatible), differential data strobe (DQS/DQS#) option, DLL to align DQ and DQS with CK, and on‑die termination (ODT) to help reduce reflections.
• Reliability & Refresh Supports 64 ms / 8,192‑cycle refresh and adjustable data‑output drive strength for tuning signal margins.
• Package & Temperature 60‑ball FBGA (60‑FBGA) package in a commercial operating temperature range of 0°C to 85°C (T_C).
• Compliance & Options RoHS compliant; features and implementation options include duplicate RDQS for x8, posted CAS additive latency, and support for JEDEC clock jitter specification.

Typical Applications

• System Memory Integration Used as on‑board DDR2 memory where a 512 Mbit parallel DDR2 device in a 60‑FBGA footprint is required.
• Embedded Platforms Suitable for compact embedded boards needing low‑voltage DDR2 SDRAM with configurable latency and burst behavior.
• Consumer and Industrial Electronics Applicable for designs operating within the commercial temperature range that require JEDEC‑compatible DDR2 memory in a small FBGA package.

Unique Advantages

• Compact FBGA Footprint: 60‑ball FBGA delivers a small package size for space‑constrained PCB layouts.
• Low‑Voltage Operation: 1.7 V–1.9 V supply reduces system power compared with higher‑voltage memories while maintaining DDR2 signaling.
• Flexible Performance Tuning: Programmable CAS latency, selectable burst lengths, adjustable drive strength and DLL alignment allow designers to tune timing and signal integrity.
• Signal Integrity Options: On‑die termination, differential DQS and RDQS support (x8) help manage high‑speed data capture and reduce board‑level tuning effort.
• Industry Standard Interoperability: JEDEC‑standard I/O and support for JEDEC clock jitter specification facilitate integration with standard DDR2 controllers and PHYs.
• Regulatory Compliance: RoHS compliant as documented in the product datasheet.

Why Choose IC DRAM 512MBIT PAR 60FBGA?

The MT47H64M8B6-37E:D TR provides a balanced DDR2 SDRAM solution combining 512 Mbit density, low‑voltage operation, and flexible timing/configuration in a compact 60‑FBGA package. Its JEDEC‑compatible I/O, programmable latencies and on‑die termination make it suitable for systems requiring reliable parallel DDR2 memory integration at commercial temperature ranges.

This device is appropriate for engineers specifying a 64M × 8 DDR2 component where package size, configurable performance parameters and low‑voltage operation are key selection criteria. The combination of refresh management, signal integrity features and RoHS compliance supports robust, maintainable designs over product life.

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