MT47H64M8B6-25E:D TR

The MT47H64M8B6-25E:D TR is a 512 Mbit DDR2 SDRAM organized as 64M × 8 with a parallel memory interface in a 60-ball FBGA package. It implements DDR2 architecture with features such as a DLL, selectable burst lengths, and 4 internal banks to support concurrent memory operations.

Designed for systems operating from 1.7 V to 1.9 V (nominal 1.8 V I/O), this device targets designs requiring a compact, low-voltage DDR2 memory solution with a 400 MHz clock capability and an operating case temperature range of 0 °C to 85 °C.

Key Features

• Memory Core  DDR2 SDRAM architecture with 4 internal banks and a 4n-bit prefetch for burst-oriented high-speed transfers.
• Capacity & Organization  512 Mbit total capacity organized as 64M × 8 (16 Meg × 8 × 4 banks configuration available in the family).
• Performance  Supports a 400 MHz clock frequency (400 MT/s data rate for the -25E speed grade); access time listed as 400 ps and write cycle time (word/page) of 15 ns.
• Voltage & I/O  VDD and VDDQ operating range 1.7 V to 1.9 V with JEDEC-standard 1.8 V I/O (SSTL_18-compatible) as specified in the datasheet.
• Timing & Latency  Programmable CAS latency and posted CAS additive latency options; selectable burst lengths of 4 or 8 and WRITE latency = READ latency − 1 CK per datasheet timing options.
• Signal Integrity  On-die termination (ODT), optional differential data strobe (DQS/DQS#), and a DLL to align DQ and DQS transitions with CK.
• Package & Thermal  60-ball FBGA package (60-FBGA) with a specified operating case temperature range of 0 °C to 85 °C.
• Standards & Options  RoHS-compliant device offering JEDEC clock jitter support and optional features documented in the product family datasheet.

Unique Advantages

• Low-voltage operation: Reduces I/O power by operating at 1.7 V–1.9 V with JEDEC-standard 1.8 V I/O compatibility.
• High throughput for DDR2 class: 400 MT/s data rate capability (‑25E speed grade) and 4n-bit prefetch support burst transfers efficiently.
• Flexible timing: Programmable CAS latency, posted CAS additive latency, and selectable burst lengths allow tuning for system timing requirements.
• Improved signal integrity: On-die termination, DLL alignment, and optional differential DQS support help simplify board-level termination and timing margins.
• Compact footprint: 60-FBGA package provides a small form factor for space-constrained designs while delivering 512 Mbit of DDR2 memory.

Why Choose IC DRAM 512MBIT PARALLEL 60FBGA?

The MT47H64M8B6-25E:D TR delivers a compact DDR2 SDRAM solution that combines a 512 Mbit capacity and 64M × 8 organization with low-voltage 1.8 V I/O and a 60-FBGA package. Its programmable timing, on-die termination, and DLL support give system designers control over latency and signal integrity for parallel memory interfaces.

This device is suited to designs that require a verified DDR2 memory component with 400 MHz capability, configurable latency and burst behavior, and a defined commercial operating temperature range. Use it where a compact, standards-based DDR2 memory element is required in a parallel-interface implementation.

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