MT47H64M8B6-37E IT:D TR

The MT47H64M8B6-37E IT:D TR is a 512 Mbit DDR2 SDRAM organized as 64M × 8 with a parallel memory interface in a 60-ball FBGA package. It implements DDR2 SDRAM architecture with selectable burst lengths, DLL alignment, on-die termination options, and JEDEC-standard 1.8 V I/O.

This device targets applications requiring low-voltage DDR2 memory and industrial temperature operation, offering a compact 60‑FBGA footprint with electrical and timing options for tuning performance and signal integrity.

Key Features

• Memory Core – 512 Mbit DDR2 SDRAM organized as 64M × 8 with 4 internal banks for concurrent operation.
• Performance – Clock frequency specified at 267 MHz and access time listed as 500 ps; programmable CAS latency and selectable burst lengths (4 or 8) allow timing optimization.
• Interface and Timing – Parallel DDR2 interface with differential data strobe (DQS/DQS#) options, DLL to align DQ and DQS with CK, and WRITE latency = READ latency − 1 tCK.
• Signal Integrity – On‑die termination (ODT) and adjustable data-output drive strength to support system-level signal integrity tuning.
• Power – Low-voltage operation with VDD and VDDQ in the range 1.7 V to 1.9 V and JEDEC-standard 1.8 V I/O (SSTL_18‑compatible).
• Timing & Refresh – 64 ms refresh interval with 8,192-cycle refresh count and documented write cycle time (word page) of 15 ns.
• Package – 60‑FBGA supplier device package for compact board-level integration.
• Temperature Options – Industrial temperature option: operating temperature specified from −40 °C to 95 °C (TC).
• Compliance – Datasheet lists RoHS compliance for the DDR2 family variants.

Typical Applications

• Industrial Embedded Systems – Use as system memory in industrial controllers and appliances requiring DDR2 memory with industrial temperature operation.
• Communications Equipment – Local buffer and working memory in networking and communications modules where 1.8 V DDR2 interfaces are required.
• Compact Board Designs – Memory expansion in space-constrained PCBs using the 60‑FBGA package.

Unique Advantages

• Low‑voltage DDR2 operation: 1.7 V–1.9 V supply ranges reduce power domain complexity for 1.8 V systems.
• Industrial temperature support: Specified operation from −40 °C to 95 °C enables deployment in temperature‑sensitive environments.
• Tunable timing and drive: Programmable CAS latency, selectable burst lengths, DLL alignment and adjustable drive strength allow system-level performance and signal integrity optimization.
• On‑die termination and DQS options: ODT plus differential data strobe support helps simplify board routing and improve timing margins.
• Compact FBGA footprint: 60‑ball FBGA package facilitates dense, space-efficient board layouts.

Why Choose IC DRAM 512MBIT PAR 60FBGA?

The MT47H64M8B6-37E IT:D TR provides a standardized 512 Mbit DDR2 memory solution with industrial temperature capability, JEDEC‑standard 1.8 V I/O, and package options tailored for compact system designs. Its timing flexibility, on‑die termination, and drive-strength adjustability make it suitable for designs that require controllable signal integrity and low-voltage DDR2 operation.

This device is appropriate for engineers specifying DDR2 memory in embedded and industrial products that require a 60‑FBGA form factor and programmable timing options. The combination of industrial temperature range and standard DDR2 features supports reliable deployment in temperature-challenging environments.

Request a quote or submit an RFQ for the MT47H64M8B6-37E IT:D TR to receive pricing and availability information tailored to your production needs.