MT47H64M8B6-3:D TR

The MT47H64M8B6-3:D TR is a 512 Mbit DDR2 SDRAM device organized as 64M × 8 with a parallel memory interface in a 60-ball FBGA package. It implements DDR2 architecture with features drawn from Micron’s 512Mb DDR2 family and is intended for systems requiring a compact, volatile high-speed DRAM element.

Key characteristics include a 1.7 V–1.9 V supply range, a 333 MHz clock frequency (as specified), programmable CAS latency and burst lengths, and an operating temperature range of 0 °C to 85 °C (commercial).

Key Features

• Core / Architecture DDR2 SDRAM architecture with 4 internal banks and a 4n-bit prefetch design for high-throughput burst transfers.
• Memory Organization & Capacity 512 Mbit capacity arranged as 64M × 8 (16 Meg × 8 × 4 banks) suitable for parallel DDR2 memory systems.
• Performance Specified clock frequency 333 MHz and access time 450 ps; selectable burst lengths of 4 or 8 and programmable CAS latency for timing flexibility.
• Power & I/O VDD/VDDQ = 1.8 V ±0.1 V (listed supply range 1.7 V–1.9 V) with JEDEC-standard 1.8 V I/O (SSTL_18-compatible) signaling options.
• Timing & Refresh Supports standard DDR2 timing parameters including programmed CAS latencies, posted CAS additive latency (AL), and 64 ms / 8,192-cycle refresh behavior.
• Signal Integrity & Options On-die termination (ODT), DLL to align DQ/DQS with CK, and optional differential data strobe (DQS/DQS#) and duplicate output strobe (RDQS) for x8 configurations.
• Package & Mounting 60-ball FBGA (60-FBGA) package case, surface-mount mounting; device delivered in FBGA package variants per Micron part numbering.
• Temperature Range Commercial operating temperature: 0 °C to 85 °C (T_C).
• Compliance Listed as RoHS compliant in the provided datasheet material.

Unique Advantages

• Standard 1.8 V I/O compatibility: Ensures interface compatibility with JEDEC SSTL_18 signaling environments while operating from a 1.7 V–1.9 V supply window.
• Configurable timing: Programmable CAS latency, posted additive latency and selectable burst lengths provide design flexibility to match system timing requirements.
• Integrated signal management: On-die termination and DLL alignment of DQ/DQS reduce board-level tuning and help maintain signal integrity at DDR2 data rates.
• Compact FBGA footprint: 60-ball FBGA package enables high-density board placement for space-constrained designs.
• Concurrent bank operation: Four internal banks support overlapping operations to improve effective throughput for burst-oriented memory access patterns.
• RoHS-compliant construction: Device is listed as RoHS compliant in the datasheet, supporting regulatory and environmental requirements.

Why Choose IC DRAM 512MBIT PARALLEL 60FBGA?

The MT47H64M8B6-3:D TR provides a compact DDR2 DRAM solution with a clear set of programmable timing and signal-integrity features suited to systems that require a 512 Mbit x8 parallel memory element in a 60-ball FBGA package. Its 1.7 V–1.9 V supply range, JEDEC 1.8 V I/O compatibility, on-die termination and DLL support make it appropriate for designs needing controlled I/O behavior and configurable latency.

Choose this device when your design calls for a Micron DDR2 512 Mbit component with configurable timing, FBGA packaging, and commercial temperature operation. Its feature set supports scalable integration into memory subsystems where burst transfers, bank concurrency and interface standardization are important.

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