MT47H64M8B6-25E IT:D TR

The MT47H64M8B6-25E IT:D TR is a 512 Mbit DDR2 SDRAM organized as 64M × 8 in a parallel memory interface. It implements DDR2 architecture with 4 internal banks and 4n-bit prefetch, delivering standard DDR2 functionality for system memory subsystems.

Suited for designs that require JEDEC-standard 1.8 V I/O and industrial-temperature operation, this device provides a compact 60-ball FBGA package and configurable timing options to fit a range of embedded and industrial memory applications.

Key Features

• Core Architecture  DDR2 SDRAM with 4 internal banks and 4n-bit prefetch architecture for standard DDR2 operation.
• Memory Configuration  512 Mbit capacity, organized as 64M × 8 with a parallel memory interface and selectable burst lengths (4 or 8).
• Performance & Timing  Clock frequency 400 MHz and access time 400 ps. Write cycle time (word page) specified at 15 ns; programmable CAS latency and posted CAS additive latency are supported.
• Voltage & I/O  Low-voltage operation with VDD and VDDQ = 1.8 V ±0.1 V (listed supply range 1.7 V–1.9 V) and JEDEC-standard 1.8 V I/O (SSTL_18-compatible).
• Signal Integrity  On-die termination (ODT), DLL to align DQ/DQS transitions with CK, and optional differential data strobe (DQS/DQS#) and duplicate RDQS output strobe for x8 configurations.
• Package & Temperature  60-ball FBGA package (60-FBGA) with an industrial temperature option; operating temperature specified as −40°C to 95°C (TC).
• Standards & Compliance  RoHS compliant and supports JEDEC clock jitter specification as documented in the product datasheet.

Typical Applications

• Industrial Embedded Systems  Memory subsystem for embedded controllers and industrial designs requiring DDR2 memory with an extended temperature range.
• Board-Level Memory Modules  Compact 60-FBGA package suited for custom module designs and board-level integration where space-efficient DDR2 memory is required.
• Legacy DDR2 Platforms  System memory replacement or integration in designs that utilize DDR2 SDRAM with JEDEC-standard 1.8 V I/O signaling.

Unique Advantages

• Industrial-temperature capability: Built to operate across −40°C to 95°C (TC), addressing temperature-critical embedded applications.
• Compact packaging: 60-ball FBGA delivers high density in a small footprint for space-constrained board designs.
• Low-voltage operation: VDD/VDDQ = 1.8 V ±0.1 V reduces supply complexity for designs standardized on 1.8 V DDR2 signaling.
• Signal and timing flexibility: Programmable CAS latency, posted CAS additive latency, selectable burst lengths, DLL and ODT support enable tuning for target system timing and signal integrity.
• DDR2-standard feature set: Differential DQS option, duplicate RDQS for x8, and 4 internal banks provide standard DDR2 functionality for common memory architectures.
• Proven manufacturer: Supplied by Micron Technology Inc., with documented DDR2 specifications and speed-grade options in the product datasheet.

Why Choose MT47H64M8B6-25E IT:D TR?

The MT47H64M8B6-25E IT:D TR is a straightforward DDR2 SDRAM option when you need a 512 Mbit, x8 organization in a compact 60-FBGA package with industrial-temperature operation. Its JEDEC-standard 1.8 V I/O, programmable timing options, and signal integrity features (ODT, DLL, DQS options) make it suitable for embedded and board-level memory subsystems that require standard DDR2 capability and configurable performance.

Engineered by Micron Technology Inc. and documented in the product datasheet, this device targets applications that require predictable DDR2 behaviors, flexible timing, and a compact form factor for constrained layouts.

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