MT47H32M8BP-3:B TR

The MT47H32M8BP-3:B TR is a 256 Mbit DDR2 SDRAM organized as 32M × 8 with a parallel memory interface in a 60-ball FBGA (8 × 12) package. It implements DDR2 architecture with a 4n-bit prefetch and on-die DLL to align data transitions for synchronous high-speed operation.

This device is intended for systems requiring a compact, low-voltage (1.7–1.9 V) parallel DDR2 memory solution with programmable latency and selectable burst lengths to match system timing requirements. The device is specified for commercial temperature operation (0 °C to 85 °C).

Key Features

• Memory Type & Capacity — 256 Mbit DDR2 SDRAM organized as 32M × 8 with a parallel memory interface.
• Speed Grade — Speed grade -3 (DDR2-667) with a 3.0 ns cycle time option; listed clock frequency 333 MHz and an access time of 450 ps.
• Power — Low-voltage operation with Vdd and VddQ = 1.8 V ±0.1 V (specified supply range 1.7 V to 1.9 V).
• Timing & Latency — Programmable CAS latency (CL), posted CAS additive latency (AL), and WRITE latency defined as READ latency − 1 tCK; selectable burst lengths of 4 or 8.
• Architecture — 4 internal banks for concurrent operation and 4n-bit prefetch architecture for DDR2 data throughput.
• Signal Integrity — On-die termination (ODT) and DLL for DQ/DQS alignment; differential data strobe (DQS/DQS#) option is supported.
• Reliability & Refresh — 64 ms, 8,192-cycle refresh; adjustable data-output drive strength to match board requirements.
• Package & Thermal — 60-ball FBGA (8 mm × 12 mm) supplier device package; commercial operating temperature 0 °C to 85 °C.
• Standards — JEDEC-standard 1.8 V I/O (SSTL_18-compatible) and support for JEDEC clock jitter specification.

Typical Applications

• System Memory — Parallel DDR2 memory expansion where a 256 Mbit x8 device with programmable latency and selectable burst lengths is required.
• Embedded Platforms — Compact FBGA footprint and low-voltage operation for embedded designs that require synchronous DDR2 storage.
• Consumer and Industrial Electronics — Commercial temperature rated memory suitable for designs operating between 0 °C and 85 °C.

Unique Advantages

• Low-voltage operation: 1.7 V to 1.9 V supply range with JEDEC-standard 1.8 V I/O reduces power draw compared to higher-voltage alternatives.
• Flexible timing configuration: Programmable CAS latency, posted additive latency, and selectable burst lengths allow tuning for system throughput and latency trade-offs.
• On-die signal conditioning: DLL and on-die termination (ODT) improve timing alignment and signal integrity for high-speed DDR2 operation.
• Compact package: 60-ball FBGA (8 × 12 mm) minimizes board area for space-constrained designs while maintaining a parallel DDR2 interface.
• Concurrent bank operation: Four internal banks and 4n-bit prefetch architecture enable improved data throughput within the device’s DDR2 framework.

Why Choose MT47H32M8BP-3:B TR?

The MT47H32M8BP-3:B TR provides a compact, low-voltage DDR2 SDRAM option delivering 256 Mbit capacity with flexible timing and on-die features that support robust high-speed parallel memory designs. Its commercial temperature rating and FBGA packaging make it appropriate for a wide range of board-level implementations where space and power are constrained.

This device is suited to engineers and procurement teams designing systems that require a standard-compliant DDR2 x8 memory with programmable latency, selectable burst lengths, and on-die termination for improved signal integrity. Its combination of timing options and package density supports scalable memory integration in embedded and system designs.

If you need pricing, lead time, or technical clarification for the MT47H32M8BP-3:B TR, request a quote or submit an RFQ to receive current availability and ordering information.