MT47H32M16NF-25E:H

The MT47H32M16NF-25E:H is a 512 Mbit DDR2 SDRAM organized as 32M × 16 with a parallel memory interface. It delivers up to 400 MHz clock operation with low-voltage supply support and is packaged in a compact 84-FBGA (8×12.5) footprint for board-level memory integration.

This volatile DRAM device is specified with an access time of 400 ps, a write cycle time (word page) of 15 ns, and an operating temperature range of 0°C to 85°C (TC), making it suitable for designs that require a mid-density DDR2 memory element in a small BGA package.

Key Features

• Memory Type & Architecture DDR2 SDRAM, volatile memory organized as 32M × 16 providing a total capacity of 512 Mbit in a parallel memory format.
• Performance Supports a 400 MHz clock frequency with an access time of 400 ps to support high-throughput memory operations within the DDR2 specification.
• Timing Write cycle time (word page) specified at 15 ns, enabling predictable write timing for system memory management.
• Power Operates from a low-voltage supply range of 1.7 V to 1.9 V, reducing power draw relative to higher-voltage memory options.
• Package Supplied in an 84-FBGA package (8×12.5) / 84-TFBGA package case, offering a compact footprint for high-density PCB layouts.
• Operating Range Specified for operation from 0°C to 85°C (TC), suitable for typical commercial-temperature applications.

Typical Applications

• System Memory Modules Used as a 512 Mbit DDR2 parallel memory component to provide mid-density DRAM capacity in memory subsystems.
• Embedded Platforms Integrates into embedded designs that require DDR2 SDRAM with a 32M ×16 organization and low-voltage operation.
• Board-Level Memory Integration Suitable for PCB designs needing a compact 84-FBGA packaged DRAM device with defined timing and access characteristics.

Unique Advantages

• Defined DDR2 Performance: 400 MHz clock frequency and 400 ps access time provide clear performance parameters for system timing and throughput planning.
• Compact BGA Footprint: 84-FBGA (8×12.5) package supports high-density board layouts and conservative board space utilization.
• Low-Voltage Operation: 1.7 V to 1.9 V supply range enables lower power consumption compared with higher-voltage memory options.
• Predictable Write Timing: 15 ns write cycle time (word page) helps simplify memory controller timing and validation.
• Mid-Density Capacity: 512 Mbit organized as 32M × 16 offers a balanced capacity choice for designs requiring moderate DRAM density.

Why Choose MT47H32M16NF-25E:H?

The MT47H32M16NF-25E:H positions itself as a compact, mid-density DDR2 SDRAM solution combining defined timing, low-voltage operation, and an 84-FBGA package for efficient board integration. Its 32M × 16 organization and 400 MHz clock support enable designers to implement predictable memory subsystems with clear electrical and timing parameters.

This device is suited to engineers and procurement teams specifying DDR2 memory for embedded platforms, system memory modules, or other designs that require a 512 Mbit parallel DRAM device with commercial temperature range and a small BGA footprint.

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