MT47H32M16NF-25E IT:H TR

The MT47H32M16NF-25E IT:H TR is a 512 Mbit volatile DRAM device implemented in DDR2 SDRAM architecture with a parallel memory interface. It is organized as 32M × 16 and supplied in an 84-TFBGA (84-FBGA, 8×12.5) package.

Designed for applications that require compact, low-voltage DDR2 memory, this device offers 400 MHz clock operation, a write cycle time (word/page) of 15 ns and an operating temperature range of −40°C to 85°C, providing a balance of performance and thermal robustness for system memory needs.

Key Features

• Memory Core  DDR2 SDRAM architecture with a memory organization of 32M × 16, providing 512 Mbit total capacity.
• Performance  400 MHz clock frequency and 400 ps access time deliver deterministic timing characteristics; write cycle time (word/page) specified at 15 ns.
• Power  Operates from a supply voltage range of 1.7 V to 1.9 V for low-voltage DDR2 system designs.
• Package  84-TFBGA package (listed as 84-FBGA, 8×12.5) supports compact board-level integration.
• Environmental Range  Specified operating temperature range of −40°C to 85°C (TA) for deployment across a broad range of thermal conditions.
• Interface  Parallel DRAM interface suitable for conventional DDR2 memory controllers and memory subsystems.

Typical Applications

• Embedded memory subsystems  Provides 512 Mbit DDR2 storage for systems requiring parallel SDRAM organization and deterministic timing.
• Consumer electronics  Serves as onboard DRAM where compact FBGA packaging and low-voltage operation are required.
• Industrial equipment  Useful in designs that need a wide operating temperature range (−40°C to 85°C) combined with DDR2 performance.

Unique Advantages

• High-density DDR2 memory: 512 Mbit capacity in a 32M × 16 organization enables higher memory density per device.
• Compact FBGA package: 84-TFBGA (84-FBGA, 8×12.5) minimizes board area impact for space-constrained designs.
• Low-voltage operation: 1.7 V–1.9 V supply reduces power draw compared with higher-voltage memories.
• Deterministic timing: 400 MHz clock and 400 ps access time with 15 ns write cycle time support predictable memory timing.
• Extended temperature range: −40°C to 85°C operating range supports deployment in a variety of thermal environments.

Why Choose MT47H32M16NF-25E IT:H TR?

The MT47H32M16NF-25E IT:H TR delivers a compact, low-voltage DDR2 DRAM option with clear, verifiable specifications for capacity, timing and thermal range. Its 84-TFBGA package and 32M × 16 organization make it suitable for designs that require dense parallel DRAM in a small footprint.

This device is suited for engineers and procurement teams specifying dependable DDR2 memory where supply voltage, clock frequency, access time and temperature range are key selection criteria. The combination of 512 Mbit density, 400 MHz operation and FBGA packaging supports scalable integration into systems requiring standard DDR2 parallel memory.

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