MT47H32M16NF-25E IT:H
| Part Description |
IC DRAM 512MBIT PARALLEL 84FBGA |
|---|---|
| Quantity | 467 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 26 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 84-FBGA (8x12.5) | Memory Format | DRAM | Technology | SDRAM - DDR2 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 400 ps | Grade | Automotive | ||
| Clock Frequency | 400 MHz | Voltage | 1.7V ~ 1.9V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 95°C (TC) | Write Cycle Time Word Page | 15 ns | Packaging | 84-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0028 |
Overview of MT47H32M16NF-25E IT:H – 512 Mbit DDR2 Parallel DRAM (84-FBGA)
The MT47H32M16NF-25E IT:H is a 512 Mbit volatile SDRAM device implemented in DDR2 technology and supplied in an 84‑TFBGA package. It provides a 32M × 16 memory organization with a parallel memory interface for systems requiring synchronous DRAM.
Designed for applications that integrate parallel DDR2 memory, the device combines a 400 MHz clock frequency and a compact 84‑FBGA (8 × 12.5 mm) footprint to support space-constrained board designs while operating over a wide temperature range.
Key Features
- Core / Technology SDRAM implemented as DDR2 technology for synchronous double-data-rate operation as specified in the device data.
- Memory Capacity & Organization 512 Mbit total capacity organized as 32M × 16, providing a parallel 16-bit data path.
- Performance 400 MHz clock frequency and a 400 ps access time support high-rate synchronous transfers within DDR2 timing constraints.
- Timing Write cycle time (word page) specified at 15 ns, providing a defined write timing parameter for system timing design.
- Power Operates from a supply voltage range of 1.7 V to 1.9 V, enabling designs that target DDR2 voltage rails.
- Package & Mounting Supplied in an 84‑TFBGA (84‑FBGA, 8 × 12.5 mm) package suited for surface-mount applications.
- Operating Temperature Rated for −40 °C to 95 °C (TC), enabling operation across a broad temperature window.
Unique Advantages
- Parallel 16-bit organization: The 32M × 16 arrangement provides a straightforward 16-bit data interface for parallel memory designs.
- Defined DDR2 timing: 400 MHz clock frequency and 15 ns write cycle time give explicit timing metrics for system integration.
- Low-voltage operation: 1.7 V to 1.9 V supply range aligns with standard DDR2 power rails to simplify power-supply design.
- Compact BGA package: 84‑TFBGA (8 × 12.5 mm) package supports high-density PCB layouts where board space is limited.
- Broad temperature rating: −40 °C to 95 °C operational range supports a wide range of environmental conditions.
Why Choose IC DRAM 512MBIT PARALLEL 84FBGA?
The MT47H32M16NF-25E IT:H positions itself as a compact, specification-driven DDR2 SDRAM device for designs that require a 512 Mbit parallel memory in an 84‑FBGA form factor. Its documented clock, timing, voltage, and temperature parameters allow engineers to plan system timing and power budgets with concrete, verifiable values.
This device is suitable for designs that need a 16-bit parallel DDR2 memory element with defined access and write timing characteristics, and for teams prioritizing clear electrical and thermal operating ranges during system validation and deployment.
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