MT47H64M8B6-25E L:D TR

The MT47H64M8B6-25E L:D TR is a 512 Mbit DDR2 SDRAM device organized as 64M × 8 with a parallel memory interface in a 60-ball FBGA package. It implements DDR2 architecture with a 4n-bit prefetch and four internal banks for concurrent operation.

Designed for commercial temperature systems, the device operates from 1.7 V to 1.9 V (VDD = 1.8 V ±0.1 V) and supports DDR2 timing grades including the -25E speed grade. Key on-die features include DLL alignment, selectable burst lengths, programmable CAS latency and on-die termination for signal integrity.

Key Features

• Core / Memory Architecture  DDR2 SDRAM organized as 64M × 8 (512 Mbit) with four internal banks and 4n-bit prefetch architecture for DDR2 operation.
• Performance  400 MHz clock frequency (device timing and speed grade data included); access time listed at 400 ps in product specifications.
• Timing and Latency  Programmable CAS latency (CL) and posted CAS additive latency (AL); selectable burst lengths of 4 or 8. Timing grades include 2.5 ns @ CL = 5 (DDR2-800) for the -25E variant.
• Power and I/O  VDD/VDDQ = 1.8 V ±0.1 V (specified supply range 1.7 V – 1.9 V) with JEDEC-standard 1.8 V I/O (SSTL_18-compatible).
• Signal Integrity  DLL to align DQ and DQS transitions with CK, differential data strobe (DQS/DQS#) option and on-die termination (ODT) to improve signal timing and integrity. Duplicate output strobe (RDQS) option available for x8 configuration.
• Refresh and Reliability  64 ms, 8,192-cycle refresh and four internal banks for concurrent operation and refresh management.
• Package and Mounting  60-ball FBGA supplier device package for compact mounting; specified as a parallel DRAM format.
• Environmental / Compliance  Datasheet indicates RoHS compliance; commercial operating temperature range specified as 0 °C to 85 °C (T_C).

Typical Applications

• Commercial embedded systems  Memory expansion for commercial-temperature boards that require 512 Mbit DDR2 parallel DRAM in a compact FBGA footprint.
• Small-form-factor memory modules  Integration into compact memory modules or daughtercards where a 60-ball FBGA package and 1.8 V operation are required.
• Legacy DDR2 platforms  Replacement or population of systems designed for DDR2 SDRAM with programmable latency and selectable burst operation.

Unique Advantages

• DDR2 architecture with 4n prefetch: Enables standard DDR2 data handling and four internal banks for concurrent access patterns.
• Flexible timing options: Programmable CAS latency, posted CAS additive latency and selectable burst lengths allow tuning for platform timing requirements; documented -25E timing supports DDR2-800 operation.
• 1.8 V low-voltage operation: Narrow supply window (1.7 V–1.9 V) with JEDEC-standard SSTL_18 I/O for systems designed around 1.8 V signaling.
• On-die signal features: DLL alignment, ODT and DQS/DQS# options help manage signal integrity without requiring additional external termination complexity.
• Compact FBGA package: 60-ball FBGA minimizes board area while providing a standard supplier device package for assembly.
• Commercial temperature rating: Specified operating range of 0 °C to 85 °C for deployments in commercial-temperature environments.

Why Choose MT47H64M8B6-25E L:D TR?

The MT47H64M8B6-25E L:D TR delivers a straightforward DDR2 SDRAM solution for designs that require 512 Mbit capacity in a compact 60-ball FBGA package with 1.8 V operation. Its programmable timing, selectable burst lengths and on-die termination features provide the configurability needed to match platform timing and signal-integrity requirements.

This device is suited to commercial-temperature systems and legacy DDR2 platforms where predictable DDR2 timing grades and a small footprint simplify board-level memory integration while maintaining JEDEC-compatible signaling and refresh characteristics.

Request a quote or submit an inquiry for pricing and availability of the MT47H64M8B6-25E L:D TR to obtain lead-time and volume information for your project needs.