MT47H64M8CB-3:B

The MT47H64M8CB-3:B is a 512Mbit DDR2 SDRAM device organized as 64M × 8 with a parallel memory interface in a 60-ball FBGA package. It implements DDR2 SDRAM architecture with 4n-bit prefetch and supports programmable timing features for system memory applications.

Designed for systems requiring a compact, 1.8V-class parallel DRAM solution, the device provides high-speed volatile storage with JEDEC-standard 1.8V I/O and on-die features to assist signal integrity and timing control.

Key Features

• Core / Memory Architecture DDR2 SDRAM with 4n-bit prefetch architecture, organized as 64M × 8 for a total density of 512 Mbit and four internal banks for concurrent operation.
• Performance & Timing Clock frequency specified at 333 MHz with an access time of 450 ps and a write cycle time (word page) of 15 ns; supports programmable CAS latency and posted CAS additive latency.
• Power & I/O Vdd/VddQ supply range of 1.7 V to 1.9 V (JEDEC-standard 1.8 V I/O, SSTL_18-compatible) enabling standard low-voltage DDR2 operation.
• Signal & Timing Controls DLL to align DQ and DQS transitions with CK, differential data strobe (DQS/DQS#) option and duplicate output strobe (RDQS) option for x8 devices; adjustable data-output drive strength.
• Data Integrity & Refresh On-die termination (ODT) option and a 64 ms, 8,192-cycle refresh mechanism to maintain data integrity during operation.
• Package & Mounting 60-ball FBGA (60-FBGA) supplier device package, surface-mount volatile memory format suited for compact board-level integration.
• Operating Range & Compliance Commercial operating temperature range of 0°C to 85°C (T_C) and listed as RoHS compliant in the device feature set.

Typical Applications

• Parallel memory subsystems — Provides 512Mbit DDR2 volatile storage for systems requiring parallel DDR2 memory interfaces and programmable latency control.
• Embedded controllers — Serves as off-chip DRAM where 64M × 8 organization and 1.8V operation align with embedded memory requirements.
• Networking & communications modules — Offers high-speed volatile buffer memory with on-die termination and DLL-supported timing for board-level memory buffering.

Unique Advantages

• Standard DDR2 architecture: 4n-bit prefetch and programmable CAS latency provide flexible timing configurations to match system timing requirements.
• Low-voltage operation: 1.7 V to 1.9 V supply range (Vdd/VddQ) supports SSTL_18-compatible interfaces for lower-power system designs.
• Compact FBGA package: 60-ball FBGA offers a space-efficient footprint for high-density board layouts.
• Signal integrity features: DLL alignment, on-die termination and adjustable drive strength help manage DQ/DQS timing and signal quality on parallel buses.
• Commercial temperature rating: Specified 0°C to 85°C operating range for standard-temperature applications.

Why Choose MT47H64M8CB-3:B?

The MT47H64M8CB-3:B positions itself as a straightforward 512Mbit DDR2 parallel memory option that combines JEDEC-standard 1.8V I/O, programmable timing, and on-die features such as DLL and ODT to address timing and signal integrity needs. Its 64M × 8 organization and 60-FBGA package make it suitable for designs where compact, commercial-temperature DDR2 memory is required.

This device is appropriate for engineers and procurement teams specifying a defined-density DDR2 SDRAM solution with clear operating voltage and timing parameters; documentation and features listed in the product datasheet support implementation and system integration decisions.

To request a quote or submit a sales inquiry for the MT47H64M8CB-3:B, please request a quote or contact sales through your preferred procurement channel with the part number and required quantity.