MT47H64M8CF-25E AIT:G

The MT47H64M8CF-25E AIT:G is a 512 Mbit volatile DDR2 SDRAM device organized as 64M × 8 with a parallel memory interface. It delivers DDR2 architecture memory in a compact 60-ball TFBGA/FBGA (8×10) package for systems that require parallel DRAM in a small footprint.

Designed for demanding temperature and qualification requirements, the device supports a clock frequency of 400 MHz, a supply voltage range of 1.7 V to 1.9 V, and is AEC-Q100 qualified for automotive applications with an operating temperature range of −40 °C to 95 °C.

Key Features

• Core / Technology  DDR2 SDRAM architecture providing standard DDR2 performance and signaling characteristics.
• Memory Organization  64M × 8 organization for a total memory size of 512 Mbit.
• Performance  400 MHz clock frequency with an access time of 400 ps and a write cycle time (word page) of 15 ns, enabling high-throughput parallel memory transactions.
• Power  Operates from a 1.7 V to 1.9 V supply voltage range.
• Package  60-ball TFBGA package (supplier designation: 60-FBGA, 8×10) for compact board-level integration.
• Temperature and Qualification  Operating temperature range of −40 °C to 95 °C and AEC-Q100 qualification for automotive-grade reliability.
• Interface  Parallel memory interface suitable for designs requiring standard DDR2 parallel connectivity.

Typical Applications

• Automotive Electronics  Engine control, body electronics, and other automotive modules that require AEC-Q100 qualified DDR2 memory and wide operating temperature support.
• Compact System Memory  Board-level designs needing a 512 Mbit parallel DDR2 device in a compact 60-ball BGA footprint.
• Temperature-sensitive Embedded Systems  Applications that demand operation across −40 °C to 95 °C while using industry-standard DDR2 memory timings and interfaces.

Unique Advantages

• AEC-Q100 Qualified:  Explicit automotive qualification to support designs requiring automotive-grade component reliability.
• Wide Operating Temperature Range:  −40 °C to 95 °C rating enables use in harsh-temperature environments.
• High-Speed DDR2 Operation:  400 MHz clock frequency with 400 ps access time and 15 ns write cycle time for fast parallel memory access.
• Compact BGA Package:  60-TFBGA / 60-FBGA (8×10) package minimizes board area for space-constrained applications.
• Low-Voltage Operation:  1.7 V to 1.9 V supply range supports lower-voltage system designs.

Why Choose MT47H64M8CF-25E AIT:G?

The MT47H64M8CF-25E AIT:G combines DDR2 SDRAM architecture, a 512 Mbit density, and automotive-grade qualification to address designs that require compact, high-speed parallel memory with validated reliability across a wide temperature range. Its electrical and timing characteristics make it suitable for systems that rely on standard DDR2 performance in a small BGA footprint.

This device is well suited for engineers and procurement teams specifying AEC-Q100 qualified DDR2 memory for automotive and temperature-challenged embedded applications, delivering predictable performance and a defined supply voltage and timing envelope for integration into production designs.

Request a quote or submit an inquiry for MT47H64M8CF-25E AIT:G to obtain pricing and availability information for your design requirements.