MT47H64M8CF-25E:G

The MT47H64M8CF-25E:G is a 512 Mbit DDR2 SDRAM organized as 64M × 8, offered by Micron Technology Inc. It implements DDR2 architecture with a parallel memory interface and is supplied in a 60-ball TFBGA (8 × 10 mm) package.

This device targets designs that require a 512 Mbit volatile DDR2 memory device with JEDEC 1.8 V I/O, programmable timing options, and compact FBGA mounting for board-level integration.

Key Features

• Core Architecture  DDR2 SDRAM with 4n-bit prefetch architecture and an internal DLL to align DQ and DQS transitions with CK.
• Memory Organization  512 Mbit total capacity configured as 64M × 8 with four internal banks for concurrent operation.
• Performance & Timing  Rated with a 400 MHz clock frequency and 400 ps access time. Timing grade -25E corresponds to a 2.5 ns cycle time @ CL = 5 (DDR2-800) per the datasheet options.
• Interface & Signals  JEDEC-standard 1.8 V I/O (VDD = VDDQ = +1.8 V ±0.1 V), SSTL_18-compatible signaling, differential data strobe (DQS/DQS#) option and duplicate output strobe (RDQS) option for x8.
• Power & Timing Controls  Voltage supply range specified 1.7 V to 1.9 V; adjustable data-output drive strength and on-die termination (ODT) supported.
• Memory Operations  Selectable burst lengths (4 or 8), programmable CAS latency and posted CAS additive latency; WRITE latency = READ latency − 1 CK.
• Refresh & Reliability Features  64 ms / 8192-cycle refresh operation and support for JEDEC clock jitter specifications.
• Package & Mounting  60-ball FBGA package (8 mm × 10 mm) in a 60-TFBGA configuration for compact board-level mounting.
• Operating Range  Commercial operating temperature specified as 0°C to 85°C (T_C).
• Standards & Compliance  Datasheet lists RoHS-compliant options and JEDEC-compliant timing and signaling support.
• Timing Options  Multiple published speed grades and cycle-time options (examples in datasheet include -25E: 2.5 ns @ CL = 5 / DDR2-800).

Typical Applications

• Parallel DDR2 memory subsystems  Used where a 512 Mbit DDR2 SDRAM with a parallel interface and x8 organization is required on the board.
• Board-level memory expansion  Compact 60-ball FBGA mounting provides a space-efficient option for adding DDR2 memory to module or system PCBs.
• Designs requiring 1.8 V I/O  Suitable for systems using JEDEC-standard 1.8 V signaling (SSTL_18-compatible) and differential DQS timing.

Unique Advantages

• Standard JEDEC 1.8 V I/O:  VDD and VDDQ = +1.8 V ±0.1 V simplifies integration with 1.8 V memory buses and SSTL_18-compatible systems.
• Flexible timing grades:  Offered with multiple speed-grade options (including -25E) to match system performance and latency requirements.
• Signal integrity controls:  On-die termination and adjustable drive strength help optimize signal performance on-board.
• Compact FBGA package:  60-ball (8 mm × 10 mm) TFBGA package enables high-density board layouts and reliable BGA mounting.
• DDR2 feature set:  Differential DQS, 4 internal banks, DLL alignment, selectable burst lengths and programmable CAS latency provide predictable DDR2 behavior for system designers.
• Commercial temperature rating:  Specified for 0°C to 85°C operation for commercial-grade system deployments.

Why Choose IC DRAM 512MBIT PARALLEL 60FBGA?

The MT47H64M8CF-25E:G delivers a Micron 512 Mbit DDR2 SDRAM solution with x8 organization, JEDEC 1.8 V I/O compatibility, and a compact 60-ball FBGA package. Its supported timing grades, on-die termination, and adjustable drive strength provide designers with the control needed to match system timing and signal integrity requirements.

This device is appropriate for designs that need a board-mounted DDR2 memory component with defined commercial temperature operation and published timing options. The combination of DDR2 architecture features and compact FBGA mounting supports integration into space-constrained applications requiring a reliable 512 Mbit volatile memory element.

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