MT48LC128M4A2P-75:C
| Part Description |
IC DRAM 512MBIT PAR 54TSOP II |
|---|---|
| Quantity | 1,701 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 133 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 128M x 4 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0028 |
Overview of MT48LC128M4A2P-75:C – IC DRAM 512MBIT PAR 54TSOP II
The MT48LC128M4A2P-75:C is a 512 Mbit synchronous DRAM organized as 128M × 4 with a parallel memory interface in a 54-pin TSOP II package. It implements fully synchronous, pipelined SDRAM architecture with internal banks and programmable burst lengths.
Targeted at systems that require parallel SDRAM memory capacity, this device delivers PC100/PC133-compliant timing, LVTTL-compatible I/O, and a standard 3.3 V ±0.3 V supply for integration into commercial-temperature embedded designs.
Key Features
- SDR SDRAM Core Fully synchronous operation with all signals registered on the positive edge of the system clock and internal pipelined operation for column-address changes every clock cycle.
- Memory Organization 512 Mbit total capacity organized as 128M × 4 with four internal banks (32 Meg × 4 × 4 banks) for hidden row access and precharge.
- Performance and Timing PC100- and PC133-compliant timing; 133 MHz clock frequency with typical access time of 5.4 ns (CL = 3) for the -75 speed grade.
- Burst and Refresh Modes Programmable burst lengths (1, 2, 4, 8, or full page), auto precharge (including concurrent auto precharge and auto refresh), and self refresh; 64 ms, 8192-cycle refresh specification.
- Interface and I/O Parallel memory interface with LVTTL-compatible inputs and outputs for standard board-level interfacing.
- Power Single 3.3 V ±0.3 V power supply (nominal 3.3 V); supply range listed as 3.0 V to 3.6 V.
- Package and Mounting 54-pin TSOP II (0.400", 10.16 mm width) plastic package suitable for surface-mount board designs.
- Operating Temperature Commercial temperature range: 0 °C to +70 °C (TA).
Unique Advantages
- Standards-compliant timing: PC100/PC133 compliance and documented CL/timing parameters simplify system timing validation.
- Pipelined, banked architecture: Internal banks and pipelined operation enable efficient row/column operations and improved throughput for burst accesses.
- Flexible burst and refresh control: Multiple programmable burst lengths plus auto and self-refresh modes support varied memory access patterns and low-maintenance refresh handling.
- Compact surface-mount package: 54-pin TSOP II offers a small footprint for board-level memory expansion while maintaining standard pinout and mounting type.
- LVTTL I/O and single-supply operation: LVTTL-compatible I/Os and a single 3.3 V supply streamline interface design and power delivery on commercial boards.
- Commercial temperature rating: Specified 0 °C to +70 °C operation for typical commercial embedded applications.
Why Choose IC DRAM 512MBIT PAR 54TSOP II?
The MT48LC128M4A2P-75:C provides a documented, PC100/PC133-compliant SDRAM solution in a compact 54-pin TSOP II package, delivering 512 Mbit of parallel DRAM capacity with programmable burst operation and standard LVTTL I/O. Its combination of synchronous, pipelined architecture and internal banking helps support predictable timing and efficient burst transfers in board-level designs.
This part is suitable for commercial-temperature systems that require parallel SDRAM memory expansion and straightforward integration using a single 3.3 V supply. The device’s defined timing, refresh behavior, and packaging offer clear, verifiable specifications for engineering and procurement decisions.
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