MT48LC16M16A2B4-6A AIT:G TR

The MT48LC16M16A2B4-6A AIT:G TR is a 256 Mbit volatile SDRAM organized as 16M × 16 with a parallel memory interface. It delivers synchronous DRAM access with a 167 MHz clock rate and timing characteristics suitable for embedded designs that require low-latency parallel memory.

Designed and qualified for automotive use (AEC‑Q100), this device targets applications that demand robust temperature and supply ranges while maintaining high-speed parallel memory performance in a compact 54‑VFBGA (8×8) package.

Key Features

• Memory Architecture 256 Mbit SDRAM organized as 16M × 16 with a parallel memory interface for straightforward integration into systems using parallel DRAM.
• Performance Synchronous operation with a 167 MHz clock frequency and 5.4 ns access time; word‑page write cycle time of 12 ns supports responsive read/write cycles.
• Power Operates from a 3.0 V to 3.6 V supply range, supporting standard 3 V SDRAM power domains.
• Reliability & Qualification AEC‑Q100 qualification and an operating temperature range of −40 °C to 85 °C (TA) for automotive-grade reliability.
• Package & Form Factor Supplied in a 54‑VFBGA (8×8) package that provides a compact footprint for space-constrained board designs.

Typical Applications

• Automotive Electronic Control Units (ECUs) Use as parallel SDRAM in ECUs requiring AEC‑Q100‑qualified memory and extended temperature operation.
• Embedded Parallel Memory Designs Integration into embedded systems that require a 16M × 16 parallel DRAM interface for frame buffers, data buffering or working memory.
• Temperature-Varied Environments Suitable for electronic systems operating across −40 °C to 85 °C where stable DRAM performance is needed.

Unique Advantages

• Automotive Qualification: AEC‑Q100 qualification provides documented suitability for automotive applications and related reliability expectations.
• Compact Ball-Grid Package: 54‑VFBGA (8×8) package reduces PCB area while maintaining the pinout required for parallel SDRAM integration.
• Deterministic Timing: 5.4 ns access time and 12 ns page write cycle time deliver predictable latency for time-sensitive memory operations.
• Wide Voltage Range: 3.0–3.6 V supply compatibility aligns with common 3 V SDRAM power rails.
• High-Frequency Operation: 167 MHz clocking supports higher throughput within the constraints of a parallel SDRAM architecture.

Why Choose MT48LC16M16A2B4-6A AIT:G TR?

The MT48LC16M16A2B4-6A AIT:G TR combines synchronous parallel SDRAM architecture, automotive AEC‑Q100 qualification, and a compact 54‑VFBGA package to meet the needs of designs requiring reliable, high-speed parallel memory in harsh environments. Its timing characteristics and 3.0–3.6 V supply range make it suitable for embedded and automotive systems that depend on predictable DRAM performance.

Backed by Micron Technology Inc., this part is intended for engineers and procurement teams implementing automotive-grade and embedded memory solutions where form factor, qualification, and timing determinism are key selection criteria.

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