MT48LC16M16A2B4-7E:G TR
| Part Description |
IC DRAM 256MBIT PAR 54VFBGA |
|---|---|
| Quantity | 227 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-VFBGA (8x8) | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 133 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 14 ns | Packaging | 54-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of MT48LC16M16A2B4-7E:G TR – IC DRAM 256MBIT PAR 54VFBGA
The MT48LC16M16A2B4-7E:G TR is a 256 Mbit synchronous dynamic RAM (SDRAM) organized as 16M × 16 with internal 4-bank architecture in a 54-ball VFBGA package. It implements parallel SDRAM operation with a 133 MHz clock frequency and is designed for systems requiring volatile, high-speed synchronous memory.
Key attributes include PC100/PC133-compliant timing options, programmable burst lengths, internal pipelined operation and a single 3.3 V ±0.3 V power supply, making it suitable for designs that need standard SDRAM interface and timing behavior in a compact VFBGA footprint.
Key Features
- Core / Architecture Fully synchronous SDR SDRAM with internal, pipelined operation; all signals registered on the positive edge of the system clock.
- Memory Organization 256 Mbit organized as 16M × 16 with four internal banks (4 Meg × 16 × 4 banks as listed for the x16 device).
- Performance / Timing 133 MHz clock frequency (speed grade -7E); access time 5.4 ns and CAS latency timing option -7E (2-2-2) as documented for the 133 MHz grade.
- Burst and Refresh Programmable burst lengths (1, 2, 4, 8, or full page), auto precharge and auto refresh; supports 8192-cycle refresh intervals described in the datasheet.
- Interface / I/O Parallel SDRAM interface with LVTTL-compatible inputs and outputs (as noted in the device feature set).
- Power Single supply operation at 3.0 V to 3.6 V (documented as 3.3 V ±0.3 V in the datasheet).
- Package 54-ball VFBGA package (8 mm × 8 mm ball array) for compact board-level integration.
- Operating Range Commercial temperature rating of 0°C to +70°C (TA) as specified.
Typical Applications
- System Memory Use as parallel SDRAM main memory in designs requiring a 256 Mbit x16 SDRAM device with PC100/PC133 timing compatibility.
- Embedded Memory Subsystems Suitable for embedded designs that need synchronous, pipelined memory with programmable burst lengths and auto refresh features.
- Compact Board Designs The 54-ball VFBGA (8×8) package allows space-constrained PCBs to integrate 256 Mbit SDRAM in a small footprint.
Unique Advantages
- Synchronous, pipelined operation: Internal pipelining and positive-edge clock registration enable predictable, clock-aligned behavior and per-cycle column address changes.
- PC100/PC133 timing support: Documented compliance with PC100 and PC133 timing grades and a 133 MHz speed grade (-7E) option for compatible system timing.
- Flexible burst and refresh control: Programmable burst lengths and auto refresh/auto precharge modes simplify memory access patterns and refresh management.
- Standard 3.3 V supply: Operates from a single 3.0 V to 3.6 V supply (3.3 V ±0.3 V), matching common legacy SDRAM power domains.
- Compact VFBGA package: 54-ball VFBGA (8×8) provides a dense package option for designs constrained by PCB area.
Why Choose IC DRAM 256MBIT PAR 54VFBGA?
The MT48LC16M16A2B4-7E:G TR offers a documented 256 Mbit SDR SDRAM solution with 16M × 16 organization, 4-bank architecture, and PC100/PC133 timing options. Its 133 MHz speed grade, programmable burst lengths, and standard 3.3 V supply make it a practical choice for designs that require established SDRAM behavior and compact packaging.
This device is appropriate for engineers and procurement teams specifying parallel SDRAM in commercial-temperature applications where vendor datasheet-backed timing, refresh and package details are required for system integration and validation.
Request a quote or submit an RFQ to check current pricing, availability and lead times for the MT48LC16M16A2B4-7E:G TR.