MT48LC16M16A2BG-75:D

The MT48LC16M16A2BG-75:D is a 256 Mbit volatile SDRAM organized as 16M × 16 with a parallel memory interface in a 54-ball VFBGA (8×14) package. It is a fully synchronous SDR SDRAM device with internal pipelined operation and internal banks designed for high-throughput, burst-oriented memory access.

Designed for systems targeting PC100/PC133 timing, the device operates at a clock frequency of 133 MHz, supports programmable burst lengths and auto refresh/self refresh modes, and requires a 3.0 V to 3.6 V supply over a commercial temperature range of 0 °C to 70 °C.

Key Features

• Core Architecture  SDR SDRAM, fully synchronous with all signals registered on the positive edge of the system clock and internal, pipelined operation for column changes every clock cycle.
• Memory Organization  256 Mbit total capacity organized as 16M × 16 with four internal banks (4 Meg × 16 × 4 banks), enabling burst and banked operations.
• Performance & Timing  Clock frequency 133 MHz (PC133-compliant), access time 5.4 ns, and write cycle time (word page) of 15 ns; timing options include target RCD‑RP‑CL of 3‑3‑3 at the -75 speed grade.
• Data Transfer Modes  Programmable burst lengths (1, 2, 4, 8, or full page), auto precharge, concurrent auto precharge and auto refresh modes, and self refresh support.
• Interface & I/O  Parallel memory interface with LVTTL‑compatible inputs and outputs for standard synchronous signaling.
• Power  Single supply operation in the range 3.0 V to 3.6 V (datasheet specifies single 3.3 V ±0.3 V operation).
• Package & Temperature  54‑ball VFBGA package (8×14 mm footprint) with commercial operating temperature range 0 °C to 70 °C (TA).
• Standards Compliance  PC100- and PC133-compliant timing grades are specified in the device family documentation.

Typical Applications

• PC100/PC133 memory subsystems  Use where PC100/PC133 timing compliance is required for synchronous DRAM operation.
• Embedded systems  High-density parallel SDRAM for embedded controllers and platforms that require burst transfers and banked memory access.
• Buffering and frame storage  Parallel SDRAM organization and programmable burst lengths suitable for buffering, temporary data storage, or frame buffers in digital systems.

Unique Advantages

• Synchronous, pipelined operation: All signals registered on the positive clock edge and internal pipelining allow predictable, clock-aligned data transfers.
• Flexible burst control: Programmable burst lengths (1, 2, 4, 8, full page) support a range of host transfer strategies and throughput requirements.
• Banked memory architecture: Four internal banks hide row access/precharge timing and enable more efficient continuous data access patterns.
• Industry timing grades: PC100/PC133 timing options provide defined RCD/RP/CL targets for system timing design.
• Compact BGA footprint: 54‑ball VFBGA (8×14 mm) package supports higher board density and compact system layouts.
• Standard commercial temperature and supply: 0 °C to 70 °C operating range and 3.0 V–3.6 V supply align with common commercial embedded designs.

Why Choose IC DRAM 256MBIT PAR 54VFBGA?

The MT48LC16M16A2BG-75:D provides a synchronous, banked SDRAM solution with PC100/PC133 timing options, a 16M × 16 organization, and programmable burst modes suited for systems requiring predictable, clock-aligned memory transfers. Its 54-ball VFBGA package enables compact board integration while offering the timing and refresh features needed for burst-oriented designs.

This device is appropriate for engineers specifying a 256 Mbit parallel SDRAM from Micron Technology Inc. for commercial-temperature embedded platforms, buffering, or subsystem memory where PC100/PC133 timing and standard 3.3 V supply operation are required.

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