MT48LC16M16A2BG-7E:D

IC DRAM 256MBIT PAR 54VFBGA
Part Description

IC DRAM 256MBIT PAR 54VFBGA

Quantity 738 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-VFBGA (8x14)Memory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time5.4 nsGradeCommercial
Clock Frequency133 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page14 nsPackaging54-VFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization16M x 16
Moisture Sensitivity Level2 (1 Year)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of MT48LC16M16A2BG-7E:D – IC DRAM 256MBIT PAR 54VFBGA

The MT48LC16M16A2BG-7E:D is a 256 Mbit SDR SDRAM organized as 16M × 16 with a parallel memory interface in a 54-ball VFBGA package (8 × 14 mm). It implements fully synchronous SDRAM architecture with internal pipelining and multiple banks to support high-throughput, burst-oriented memory operations.

This device is targeted at systems requiring PC100/PC133‑class parallel SDRAM capacity and timing (133 MHz clock frequency), offering standard SDRAM features such as programmable burst lengths, auto refresh and self‑refresh modes for system memory applications where a compact BGA footprint and 3.3 V supply are required.

Key Features

  • Core / Architecture  4 Meg × 16 × 4 banks organization (16M × 16 total), fully synchronous SDRAM with internal pipelining and registered signals on the positive clock edge.
  • Performance / Timing  PC100- and PC133-compliant operation with a 133 MHz clock frequency, specified access time of 5.4 ns and word/page write cycle time of 14 ns.
  • Burst and Refresh  Programmable burst lengths (1, 2, 4, 8 or full page), auto precharge, auto refresh and self‑refresh support as described in the device family features.
  • Power  Single‑supply operation at 3.0 V to 3.6 V for standard 3.3 V systems.
  • Package  54‑ball VFBGA package (54‑VFBGA, 8 × 14 mm) that provides a compact board footprint for high‑density mounting.
  • Operating Range  Commercial operating temperature range of 0°C to +70°C (TA).
  • Standards and Compatibility  LVTTL‑compatible inputs/outputs and compliance with PC100/PC133 timing classes as documented in the product family datasheet.

Typical Applications

  • PC100/PC133 memory subsystems  Use as a parallel SDRAM device in systems designed to PC100/PC133 timing classes that require 256 Mbit capacity.
  • Board‑level memory expansion  Compact 54‑VFBGA package for high‑density board designs where a parallel SDRAM component is needed.
  • Embedded system memory  Standard SDRAM features (burst modes, auto refresh, self‑refresh) suitable for embedded applications requiring a 3.3 V parallel SDRAM interface.

Unique Advantages

  • Standard PC100/PC133 compliance: Enables integration into systems designed around PC100 and PC133 timing classes with defined 133 MHz operation.
  • Flexible burst and refresh modes: Programmable burst lengths plus auto and self‑refresh options simplify memory management and support different access patterns.
  • Compact BGA footprint: 54‑ball VFBGA (8 × 14 mm) reduces board area for high‑density designs while providing a parallel SDRAM interface.
  • Wide supply tolerance: Operates from 3.0 V to 3.6 V, matching common 3.3 V system supplies.
  • Commercial temperature rating: Specified for 0°C to +70°C (TA), suitable for standard commercial electronics environments.

Why Choose IC DRAM 256MBIT PAR 54VFBGA?

The MT48LC16M16A2BG-7E:D delivers a compact, parallel SDRAM solution with 256 Mbit density, PC100/PC133‑class timing and standard SDRAM features such as programmable burst lengths, auto precharge and refresh modes. Its 54‑ball VFBGA package and 3.0–3.6 V supply make it suitable for board‑level implementations where space and compatibility with 3.3 V systems are considerations.

This device is appropriate for engineers specifying parallel SDRAM in commercial temperature environments who require documented timing (133 MHz clock), standard refresh behavior and a proven SDRAM feature set as described in the product family datasheet.

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