MT48LC16M16A2BG-7E:D
| Part Description |
IC DRAM 256MBIT PAR 54VFBGA |
|---|---|
| Quantity | 738 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-VFBGA (8x14) | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 133 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 14 ns | Packaging | 54-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 16 | ||
| Moisture Sensitivity Level | 2 (1 Year) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of MT48LC16M16A2BG-7E:D – IC DRAM 256MBIT PAR 54VFBGA
The MT48LC16M16A2BG-7E:D is a 256 Mbit SDR SDRAM organized as 16M × 16 with a parallel memory interface in a 54-ball VFBGA package (8 × 14 mm). It implements fully synchronous SDRAM architecture with internal pipelining and multiple banks to support high-throughput, burst-oriented memory operations.
This device is targeted at systems requiring PC100/PC133‑class parallel SDRAM capacity and timing (133 MHz clock frequency), offering standard SDRAM features such as programmable burst lengths, auto refresh and self‑refresh modes for system memory applications where a compact BGA footprint and 3.3 V supply are required.
Key Features
- Core / Architecture 4 Meg × 16 × 4 banks organization (16M × 16 total), fully synchronous SDRAM with internal pipelining and registered signals on the positive clock edge.
- Performance / Timing PC100- and PC133-compliant operation with a 133 MHz clock frequency, specified access time of 5.4 ns and word/page write cycle time of 14 ns.
- Burst and Refresh Programmable burst lengths (1, 2, 4, 8 or full page), auto precharge, auto refresh and self‑refresh support as described in the device family features.
- Power Single‑supply operation at 3.0 V to 3.6 V for standard 3.3 V systems.
- Package 54‑ball VFBGA package (54‑VFBGA, 8 × 14 mm) that provides a compact board footprint for high‑density mounting.
- Operating Range Commercial operating temperature range of 0°C to +70°C (TA).
- Standards and Compatibility LVTTL‑compatible inputs/outputs and compliance with PC100/PC133 timing classes as documented in the product family datasheet.
Typical Applications
- PC100/PC133 memory subsystems Use as a parallel SDRAM device in systems designed to PC100/PC133 timing classes that require 256 Mbit capacity.
- Board‑level memory expansion Compact 54‑VFBGA package for high‑density board designs where a parallel SDRAM component is needed.
- Embedded system memory Standard SDRAM features (burst modes, auto refresh, self‑refresh) suitable for embedded applications requiring a 3.3 V parallel SDRAM interface.
Unique Advantages
- Standard PC100/PC133 compliance: Enables integration into systems designed around PC100 and PC133 timing classes with defined 133 MHz operation.
- Flexible burst and refresh modes: Programmable burst lengths plus auto and self‑refresh options simplify memory management and support different access patterns.
- Compact BGA footprint: 54‑ball VFBGA (8 × 14 mm) reduces board area for high‑density designs while providing a parallel SDRAM interface.
- Wide supply tolerance: Operates from 3.0 V to 3.6 V, matching common 3.3 V system supplies.
- Commercial temperature rating: Specified for 0°C to +70°C (TA), suitable for standard commercial electronics environments.
Why Choose IC DRAM 256MBIT PAR 54VFBGA?
The MT48LC16M16A2BG-7E:D delivers a compact, parallel SDRAM solution with 256 Mbit density, PC100/PC133‑class timing and standard SDRAM features such as programmable burst lengths, auto precharge and refresh modes. Its 54‑ball VFBGA package and 3.0–3.6 V supply make it suitable for board‑level implementations where space and compatibility with 3.3 V systems are considerations.
This device is appropriate for engineers specifying parallel SDRAM in commercial temperature environments who require documented timing (133 MHz clock), standard refresh behavior and a proven SDRAM feature set as described in the product family datasheet.
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