MT48LC16M16A2BG-75:D TR
| Part Description |
IC DRAM 256MBIT PAR 54VFBGA |
|---|---|
| Quantity | 1,669 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-VFBGA (8x14) | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 133 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 54-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of MT48LC16M16A2BG-75:D TR – IC DRAM 256MBIT PAR 54VFBGA
The MT48LC16M16A2BG-75:D TR is a 256 Mbit synchronous DRAM organized as 16M × 16 with a parallel memory interface in a 54-ball VFBGA package. It implements fully synchronous SDR SDRAM architecture with registered signals on the positive edge of the system clock and internal pipelined operation.
Designed for systems requiring parallel SDRAM memory, this device offers PC100/PC133-compliant timing at a 133 MHz clock frequency, single 3.3 V supply operation (3.0 V to 3.6 V specified), and an operating temperature range of 0 °C to 70 °C.
Key Features
- Core / Architecture Fully synchronous SDR SDRAM with all signals registered on the positive edge of the system clock and internal pipelined operation for column-address changes every clock cycle.
- Memory Organization 256 Mbit capacity configured as 16M × 16 with 4 internal banks.
- Performance & Timing PC100- and PC133-compliant speed grades; this -75 grade targets 133 MHz operation with 3-3-3 timing and typical access characteristics including a 5.4 ns access time and a 15 ns write cycle time (word page).
- Refresh & Modes Supports auto refresh and self-refresh modes and implements internal banks to hide row access/precharge. 8K refresh cycle operation is specified.
- Interface & Signaling Parallel SDRAM interface with LVTTL-compatible inputs and outputs and programmable burst lengths (1, 2, 4, 8, or full page).
- Power & Voltage Single‑supply operation specified from 3.0 V to 3.6 V (datasheet references 3.3 V ±0.3 V).
- Package & Temperature Supplied in a 54-ball VFBGA (8 mm × 14 mm) package with an operating ambient temperature range of 0 °C to 70 °C.
Typical Applications
- Embedded memory subsystems Use as a parallel SDRAM device where 256 Mbit density and synchronous operation are required.
- System buffers and temporary storage Suitable for applications that require burst-access and pipelined column operations for transient data storage.
- Legacy parallel-bus designs Fits designs that utilize a parallel SDRAM interface with PC100/PC133 timing requirements.
Unique Advantages
- Predictable PC133 performance: 133 MHz speed grade with defined 3-3-3 timing delivers consistent synchronous SDRAM behavior for compatible systems.
- Pipelined internal operation: Internal pipelining and bank architecture allow column address changes every clock cycle to improve effective throughput.
- Flexible burst control: Programmable burst lengths (1, 2, 4, 8 or full page) enable tuning for different access patterns and subsystem requirements.
- Standard single-supply voltage: Operates from 3.0 V to 3.6 V, aligning with common 3.3 V system power rails.
- Compact VFBGA package: 54-ball VFBGA (8×14 mm) package provides a compact footprint for board-level integration.
- Manufacturer pedigree: Offered by Micron Technology Inc., leveraging documented SDRAM feature sets such as auto refresh and LVTTL-compatible I/O.
Why Choose IC DRAM 256MBIT PAR 54VFBGA?
The MT48LC16M16A2BG-75:D TR delivers a synchronous, parallel SDRAM solution at 256 Mbit density with PC133-class timing and a compact VFBGA package. Its pipelined internal architecture, programmable burst lengths, and standard single-supply operation make it a practical choice for designs requiring deterministic SDRAM behavior and established timing profiles.
This device is appropriate for engineers specifying parallel SDRAM memory for embedded subsystems, buffer/storage functions, or legacy parallel-bus implementations that need a well-documented 16M × 16 SDRAM from an established manufacturer.
Request a quote or submit an inquiry for pricing and availability for the MT48LC16M16A2BG-75:D TR.