MT48LC16M16A2BG-7E:D TR
| Part Description |
IC DRAM 256MBIT PAR 54VFBGA |
|---|---|
| Quantity | 337 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-VFBGA (8x14) | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 133 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 14 ns | Packaging | 54-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of MT48LC16M16A2BG-7E:D TR – IC DRAM 256MBIT PAR 54VFBGA
The MT48LC16M16A2BG-7E:D TR is a 256 Mbit parallel SDRAM device organized as 16M × 16. It is a fully synchronous SDR SDRAM device designed for systems requiring PC100/PC133-compliant parallel memory with programmable burst operation.
Typical use cases include systems that require a compact, high-frequency parallel memory solution with standard SDRAM features such as auto refresh, programmable burst lengths, and support for single 3.3 V supply operation.
Key Features
- Core / Architecture SDR SDRAM; fully synchronous operation with all signals registered on the positive edge of the system clock and internal pipelined operation.
- Memory Organization 256 Mbit capacity organized as 16M × 16 with internal banks (4 banks as shown in datasheet tables).
- Performance Clock frequency up to 133 MHz (PC133-compliant) with a specified access time of 5.4 ns and a write cycle time (word/page) of 14 ns.
- Burst and Access Modes Programmable burst lengths (1, 2, 4, 8, or full page), internal banks for hiding row access/precharge, auto precharge and auto refresh modes, and self-refresh support (note: self-refresh not available on AT-marked devices per datasheet).
- Timing / Refresh Supports 8,192-cycle refresh; datasheet lists 64 ms/8192-cycle refresh for commercial devices and timing options for PC100/PC133 speed grades.
- Power Single-supply operation at 3.0 V to 3.6 V (datasheet reference: single 3.3 V ±0.3 V power supply).
- Package 54-ball VFBGA package, 8 mm × 14 mm (54-VFBGA, 8×14) for compact board footprint and high-density mounting.
- Operating Temperature Commercial operating range 0°C to +70°C (TA).
Typical Applications
- PC100/PC133 memory subsystems Use as parallel SDRAM memory in systems designed to support PC100 or PC133 timing and interface requirements.
- High-frequency buffering Local data buffering and temporary storage in systems that require 133 MHz clock operation and low access latency.
- Compact board-level memory Small-footprint designs that need a 54-ball VFBGA packaged parallel DRAM for space-constrained assemblies.
- Standard volatile storage General-purpose parallel DRAM for designs that require 256 Mbit of volatile memory with programmable burst and refresh capabilities.
Unique Advantages
- PC100/PC133 compliance: Designed to meet PC100 and PC133 timing profiles for straightforward integration into compatible memory subsystems.
- Flexible burst control: Programmable burst lengths (1, 2, 4, 8, full page) allow tuning of throughput and latency to match system access patterns.
- High-frequency operation: 133 MHz clock support and a 5.4 ns access time provide responsive memory access for time-sensitive applications.
- Compact VFBGA package: 54-ball VFBGA (8×14) minimizes PCB area while delivering a parallel interface suitable for board-level memory expansion.
- Standard single-supply power: Operates from a 3.0 V to 3.6 V supply (3.3 V nominal), simplifying power-rail requirements in conventional designs.
- Built-in refresh and self-refresh support: Auto refresh and auto precharge features with self-refresh capability (per datasheet) reduce system-level refresh management overhead.
Why Choose MT48LC16M16A2BG-7E:D TR?
The MT48LC16M16A2BG-7E:D TR delivers a standardized parallel SDRAM solution with PC100/PC133 timing compatibility, a 16M × 16 organization totaling 256 Mbit, and fully synchronous, pipelined operation. Its combination of 133 MHz clock capability, programmable burst lengths, and built-in refresh/precharge modes makes it suitable for designs that need predictable timing and burst-oriented transfers.
Packaged in a compact 54-ball VFBGA and supported by Micron's datasheet-level timing and refresh specifications, this device is appropriate for designers seeking a commercial-temperature, board-level SDRAM component with conventional 3.3 V single-supply operation.
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