MT48LC16M16A2FG-75:D TR

The MT48LC16M16A2FG-75:D TR is a 256 Mbit synchronous DRAM device organized as 16M × 16 with four internal banks. It implements a fully synchronous parallel SDRAM architecture suitable for systems requiring PC100/PC133-class parallel memory.

With a 133 MHz clock frequency, 3.0–3.6 V supply range, and a 54-ball VFBGA (8×14) package, this device addresses commercial embedded and legacy memory subsystems that need predictable synchronous performance and compact board-level integration.

Key Features

• Memory Architecture  256 Mbit DRAM organized as 16M × 16 with four internal banks for concurrent row access/precharge and pipelined operation.
• Synchronous SDRAM and Compliance  Fully synchronous SDRAM that is PC100- and PC133-compliant, with all signals registered on the positive edge of the system clock.
• Performance  133 MHz clock frequency (speed grade -75) with an access time of 5.4 ns and documented CAS/RAS timing targets (3-3-3 at -75 speed grade).
• Burst and Refresh Options  Programmable burst lengths (1, 2, 4, 8, or full page), auto precharge, auto refresh and self-refresh modes (self-refresh not available on AT devices, per datasheet).
• Interface and I/O  Parallel memory interface with LVTTL-compatible inputs and outputs for standard synchronous control signaling.
• Timing and Write Cycle  Write cycle time (word/page) listed at 15 ns; timing parameters and CAS latency options supported per datasheet tables.
• Power and Operating Range  Single 3.0 V to 3.6 V supply (standard 3.3 V ±0.3 V operation) and commercial operating temperature range of 0°C to +70°C (TA).
• Package  54-ball VFBGA package (8 mm × 14 mm) for high-density board mounting and compact footprint.

Typical Applications

• Embedded system memory  Use as synchronous parallel DRAM for commercial embedded platforms that require PC100/PC133-class memory interfaces.
• Legacy PC/board-level subsystems  Suitable for designs that implement parallel SDRAM memory subsystems compliant with PC100/PC133 timing.
• Graphics and frame buffering  Works as a compact frame buffer or temporary storage in systems needing pipelined, burst-capable DRAM access.
• Networking and buffering  Appropriate for packet buffering or temporary data storage in commercial networking equipment operating within the specified voltage and temperature ranges.

Unique Advantages

• PC100/PC133 compatibility: Documented compliance with PC100 and PC133 timing targets enables straightforward integration into matched system memory buses.
• Synchronous, pipelined operation: Fully synchronous design with internal pipelining and multiple banks supports continuous column-address changes every clock cycle for consistent throughput.
• Flexible burst modes: Programmable burst lengths (1, 2, 4, 8, full page) allow designers to optimize transfers for latency or throughput as required by the application.
• Compact VFBGA package: 54-ball VFBGA (8×14 mm) provides a dense, board-space-efficient footprint for applications with constrained PCB area.
• Standard 3.3 V supply and commercial temp range: Single-supply 3.0–3.6 V operation and 0°C to +70°C rating match many commercial embedded environments and power rails.

Why Choose MT48LC16M16A2FG-75:D TR?

The MT48LC16M16A2FG-75:D TR delivers a compact, synchronous 256 Mbit DRAM solution with PC100/PC133-class timing, programmable burst modes, and a 54-ball VFBGA package for high-density designs. Its documented timing parameters, pipelined internal bank architecture, and standard 3.3 V supply make it a practical choice for commercial embedded systems and legacy parallel-memory subsystems that require predictable SDRAM behavior.

This device is well suited to engineers and procurement teams building compact boards that need a commercially rated, parallel SDRAM device with established timing tables and refresh/burst options detailed in the product documentation.

Request a quote or submit a pricing inquiry to obtain availability, lead-time, and volume pricing information for the MT48LC16M16A2FG-75:D TR.