MT48LC16M16A2FG-75 IT:D TR

The MT48LC16M16A2FG-75 IT:D TR is a 256 Mbit synchronous DRAM organized as 16M × 16 with a parallel memory interface in a 54-ball VFBGA package (8 × 14 mm). It implements SDR SDRAM architecture with internal pipelined operation and multi-bank organization to support synchronous, high-throughput memory access.

Designed for systems using PC100/PC133-class SDRAM timing, this device offers 133 MHz clock operation, a 3.3 V ±0.3 V supply range (3.0 V to 3.6 V), and an industrial operating temperature range of −40 °C to +85 °C, providing deterministic timing and refresh behavior for memory subsystems requiring standard SDRAM functions.

Key Features

• Core / Architecture Fully synchronous SDR SDRAM with internal pipelined operation and four internal banks to enable column-address changes every clock cycle and hide row access/precharge latencies.
• Memory Organization & Capacity 256 Mbit total capacity arranged as 4M × 16 across 4 banks (16M × 16 logical organization), suitable for parallel SDRAM memory arrays.
• Performance & Timing 133 MHz clock frequency (-75 speed grade) with documented timing targets (3-3-3 RCD-RP-CL at -75) and an access time of 5.4 ns; programmable burst lengths of 1, 2, 4, 8, or full page.
• Refresh & Retention Supports auto refresh and self-refresh modes (self-refresh option noted in datasheet), with 8192-cycle refresh behavior and 64 ms/8192-cycle refresh timing for commercial and industrial grades.
• Interface & I/O LVTTL-compatible inputs and outputs with a parallel SDRAM interface and support for auto precharge and concurrent auto precharge/auto refresh modes.
• Power Single 3.3 V ±0.3 V power supply range (3.0 V to 3.6 V); datasheet references low-power self-refresh options.
• Package & Mounting 54-ball VFBGA (8 × 14 mm) package, listed as 54-VFBGA (8x14) and supplier device package 54-VFBGA (8x14), intended for board-level surface-mount use.
• Temperature Range Operating temperature specified from −40 °C to +85 °C (TA) for industrial-grade use.

Typical Applications

• PC100/PC133 SDRAM systems For memory subsystems requiring PC100/PC133-class synchronous DRAM timing and standard SDRAM features.
• Parallel memory interfaces Where a 16-bit wide parallel SDRAM device is required to implement system memory with burst and pipelined access.
• Industrial temperature designs Embedded and industrial equipment that require operation across −40 °C to +85 °C with standard SDRAM refresh and self-refresh support.

Unique Advantages

• Standard SDRAM timing compliance: PC100/PC133-compliant timing ensures predictable integration into systems designed around these SDRAM speed grades.
• Flexible burst and bank operation: Programmable burst lengths and internal multiple banks enable efficient, pipelined data transfer and reduced latency for sequential accesses.
• Industrial temperature support: Specified operation from −40 °C to +85 °C supports deployment in temperature-challenging environments.
• Compact VFBGA package: 54-ball VFBGA (8 × 14 mm) offers a compact surface-mount footprint for space-constrained PCBs.
• Robust refresh options: Auto refresh and self-refresh modes with documented refresh cycles (8192 cycles) provide deterministic data retention management.
• Standard 3.3 V supply: Operates from 3.0 V to 3.6 V (3.3 V ±0.3 V), matching common SDRAM power domains for straightforward system integration.

Why Choose MT48LC16M16A2FG-75 IT:D TR?

The MT48LC16M16A2FG-75 IT:D TR delivers a proven SDR SDRAM architecture with PC100/PC133 timing, multi-bank pipelined operation, and standard 3.3 V supply requirements. Its 256 Mbit capacity in a 16-bit parallel organization and compact 54-ball VFBGA package make it suitable for designs that require standard synchronous DRAM behavior, predictable timing, and industrial temperature operation.

Engineers integrating parallel SDRAM memory subsystems will find the device’s programmable burst lengths, auto/self-refresh capabilities, and documented timing parameters useful for deterministic memory performance and straightforward system-level timing closure.

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