MT48LC16M16A2FG-7E:D

The MT48LC16M16A2FG-7E:D is a 256 Mbit synchronous DRAM device organized as 16M × 16 with four internal banks. It implements SDR SDRAM architecture with a parallel memory interface and is supplied in a 54-ball VFBGA package (8 × 14 mm).

This device targets synchronous memory applications requiring PC133-class operation, offering a 133 MHz clock frequency, single 3.3 V (±0.3 V) supply range, and commercial operating temperature from 0 °C to 70 °C.

Key Features

• Memory Architecture 256 Mbit DRAM organized as 16M × 16 with four internal banks to support internal banked operation.
• SDR SDRAM Core Fully synchronous operation with all signals registered on the positive edge of the system clock and internal pipelined operation allowing column address changes every clock cycle.
• Performance / Timing PC100- and PC133-compliant operation with a clock frequency of 133 MHz, specified access time of 5.4 ns, and write cycle time (word page) of 14 ns.
• Programmable Burst and Refresh Supports programmable burst lengths (1, 2, 4, 8, or full page) and includes auto refresh and self refresh modes as described in the product documentation.
• Power Single 3.3 V ±0.3 V power supply (operating voltage range 3.0 V to 3.6 V) to match standard 3.3 V system rails.
• Package Supplied in a 54-ball VFBGA package (8 × 14 mm) for compact board-level integration.
• Operating Range Commercial temperature grade: 0 °C to 70 °C (TA).

Typical Applications

• PC100 / PC133-class memory subsystems: Use as synchronous DRAM in systems requiring PC100/PC133-compliant SDRAM devices.
• Embedded synchronous memory: Parallel SDRAM for designs that require a 256 Mbit, 16-bit wide memory bank in a compact VFBGA package.
• Commercial electronic equipment: Memory expansion in devices operating within the 0 °C to 70 °C commercial temperature range.

Unique Advantages

• PC100/PC133-compliant timing: 133 MHz clock support and documented PC100/PC133 compliance align the device with established synchronous DRAM timing classes.
• Synchronous pipelined operation: Fully synchronous design with pipelined operation and registered inputs simplifies timing control in clocked systems.
• Flexible burst control: Programmable burst lengths (1, 2, 4, 8, or full page) allow tuning of transfer granularity to match system needs.
• Compact VFBGA package: 54-ball VFBGA (8 × 14 mm) enables dense board-level placement for space-constrained designs.
• Standard 3.3 V supply: Operates from 3.0 V to 3.6 V, matching common 3.3 V system rails for straightforward power integration.

Why Choose IC DRAM 256MBIT PAR 54VFBGA?

The MT48LC16M16A2FG-7E:D provides a synchronous 256 Mbit parallel DRAM solution with PC133-class performance and a compact 54-ball VFBGA footprint. Its fully synchronous, banked architecture and programmable burst options make it suitable for designs that require predictable clocked memory behavior and flexible data transfer sizes.

This device is appropriate for engineers and procurement teams specifying commercial-grade SDRAM for systems operating at standard 3.3 V rails and within a 0 °C to 70 °C range, where PC100/PC133 timing compatibility and a compact package are important.

Request a quote or submit a procurement inquiry to obtain pricing and availability for the MT48LC16M16A2FG-7E:D.