MT48LC16M16A2P-6A AIT:G

IC DRAM 256MBIT PAR 54TSOP II
Part Description

IC DRAM 256MBIT PAR 54TSOP II

Quantity 109 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time5.4 nsGradeAutomotive
Clock Frequency167 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word Page12 nsPackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization16M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationAEC-Q100ECCNEAR99HTS Code8542.32.0024

Overview of MT48LC16M16A2P-6A AIT:G – IC DRAM 256MBIT PAR 54TSOP II

The MT48LC16M16A2P-6A AIT:G is a 256 Mbit volatile SDRAM organized as 16M × 16 with a parallel memory interface. It offers a 167 MHz clock frequency, 5.4 ns access time and a 12 ns write cycle time (word/page), providing predictable performance for systems that require parallel DRAM.

Packaged in a 54‑TSOP II (0.400", 10.16 mm width) and rated for a 3.0 V to 3.6 V supply, this device is specified for an operating temperature range of −40°C to 85°C and includes AEC‑Q100 qualification for automotive-grade reliability.

Key Features

  • Core / Memory — 256 Mbit SDRAM organized as 16M × 16, delivering parallel memory capacity for system buffering and working memory.
  • Performance — 167 MHz clock frequency with 5.4 ns access time and 12 ns write cycle time (word/page) for deterministic access characteristics.
  • Power — Operates from a 3.0 V to 3.6 V supply voltage to match common 3 V memory rails.
  • Package — 54‑TSOP II surface-mount package (0.400" / 10.16 mm width) for compact board-level integration.
  • Temperature & Qualification — Specified for −40°C to 85°C (TA) and AEC‑Q100 qualified; graded for automotive use.
  • Interface — Parallel DRAM interface suitable for designs that require standard parallel memory connectivity.

Typical Applications

  • Automotive systems — AEC‑Q100 qualification and −40°C to 85°C operating range make this device suitable for memory functions in automotive electronics.
  • Embedded systems with parallel memory interfaces — 16M × 16 organization and 167 MHz operation provide parallel storage capacity for embedded platforms.
  • Compact PCB designs — 54‑TSOP II package supports space-constrained board layouts while maintaining parallel DRAM connectivity.

Unique Advantages

  • AEC‑Q100 qualified automotive grade — Qualification and specified operating temperature support use in automotive-grade designs.
  • Deterministic timing — 5.4 ns access time and 12 ns write cycle time (word/page) enable predictable memory performance.
  • Parallel 16‑bit organization — 16M × 16 architecture simplifies integration into parallel memory systems.
  • Flexible supply range — 3.0 V to 3.6 V operation accommodates common 3 V power rails.
  • Compact surface-mount package — 54‑TSOP II (0.400", 10.16 mm width) eases placement in tight PCB layouts.

Why Choose MT48LC16M16A2P-6A AIT:G?

The MT48LC16M16A2P-6A AIT:G positions itself as a reliable parallel SDRAM option where a 256 Mbit capacity, predictable timing and automotive qualification are required. Its combination of 167 MHz clocking, 5.4 ns access time and AEC‑Q100 qualification delivers a balance of performance and environmental robustness for system designs operating across −40°C to 85°C.

This device is suited for engineers specifying parallel DRAM in automotive-grade and embedded designs that require compact packaging and a standard 3.0 V–3.6 V supply. The straightforward memory organization and surface-mount 54‑TSOP II package support straightforward integration into production hardware.

Request a quote or contact sales to discuss availability, lead times and volume pricing for the MT48LC16M16A2P-6A AIT:G.

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