MT48LC16M16A2P-6A L:G

The MT48LC16M16A2P-6A L:G is a 256 Mbit volatile SDRAM organized as 16M x 16 with a parallel memory interface in a 54-pin TSOP II package. It implements fully synchronous, pipelined SDR SDRAM architecture with internal banks and programmable burst lengths, delivering predictable synchronous performance for board-level memory applications.

This device is targeted at designs requiring 256 Mbit SDRAM in a 54-TSOP (0.400", 10.16 mm) footprint, operating from a single 3.3 V supply and with a commercial temperature range (0 °C to 70 °C).

Key Features

• Core / Architecture Fully synchronous SDR SDRAM with internal pipelined operation and internal bank architecture to support efficient row access and precharge management.
• Memory Organization 256 Mbit capacity organized as 16M × 16 with 4 internal banks.
• Timing & Performance Speed grade -6A targets 167 MHz operation with 3-3-3 (RCD-RP-CL) timing; access time specified at 5.4 ns and write cycle time (word/page) of 12 ns.
• Programmable Burst & Refresh Programmable burst lengths of 1, 2, 4, 8 or full page; supports auto precharge, auto refresh and self-refresh modes as described in the datasheet.
• Power Single 3.3 V (3.0 V to 3.6 V) supply.
• Package 54-pin TSOP II (0.400", 10.16 mm width) plastic package (54-TSOP II) for board-level mounting.
• Standards & Compatibility PC100- and PC133-compliant operation is listed in the device feature set.
• Operating Conditions Commercial operating temperature range: 0 °C to 70 °C (TA).

Typical Applications

• Board-level system memory — Used where a 256 Mbit parallel SDRAM is required on PCBs with a 54-TSOP II footprint.
• Legacy and PC-class memory designs — Suitable for designs leveraging PC100/PC133-compliant SDRAM timing and interfaces.
• Embedded memory expansion — Adds synchronous DRAM capacity in systems that require 16M × 16 organization and parallel memory interface.
• Industrial/commercial equipment — Fits applications operating within the commercial temperature range (0 °C to 70 °C) and 3.3 V supply domain.

Unique Advantages

• Dense 256 Mbit capacity: Provides significant memory density in a single 54-pin package for compact board designs.
• Synchronous, pipelined operation: Registered signals on the positive clock edge and internal pipelining enable predictable synchronous memory behavior.
• Flexible burst control: Programmable burst lengths (1, 2, 4, 8, full page) simplify interface timing and data transfer patterns.
• Standard 54-TSOP II package: Industry-standard TSOP II footprint (0.400" / 10.16 mm) for straightforward integration into existing board layouts.
• PC100/PC133 compliance: Listed compliance supports use in systems designed to those timing classes as documented in the device features.
• Single 3.3 V supply: Simplifies power rail requirements with operation across 3.0 V to 3.6 V.

Why Choose IC DRAM 256MBIT PAR 54TSOP II?

The MT48LC16M16A2P-6A L:G delivers a combination of 256 Mbit density, synchronous SDRAM architecture, and a compact 54-TSOP II package suitable for board-level memory needs. With PC100/PC133-listed timing, programmable burst options and internal bank architecture, it provides a predictable and flexible memory solution for designs that require a parallel SDRAM subsystem operating from a 3.3 V supply within a commercial temperature range.

This device is well suited for engineers integrating 256 Mbit SDRAM into existing footprints or new designs that prioritize synchronous timing control, standard packaging, and verified timing grades such as the -6A (167 MHz) speed grade.

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