MT48LC16M16A2P-6A XIT:G

The MT48LC16M16A2P-6A XIT:G is a 256 Mbit volatile SDR SDRAM organized as 16M × 16 with a parallel memory interface in a 54-pin TSOP II package. It implements a fully synchronous, pipelined architecture with internal banks and programmable burst lengths for system memory applications.

Designed for PC100/PC133-class systems and embedded/industrial memory subsystems, this device offers 167 MHz clock operation, a 3.0 V–3.6 V supply range, and an industrial operating temperature range of −40°C to +85°C for reliable board-level integration.

Key Features

• Core / Architecture Fully synchronous SDR SDRAM; all signals registered on the positive clock edge with internal pipelined operation and banked architecture for hidden row access and precharge.
• Memory Organization 256 Mbit organized as 16M × 16 with 4 internal banks, providing a parallel DRAM interface for system memory implementations.
• Performance 167 MHz clock frequency (speed grade -6A) with target timing of 3-3-3 (RCD–RP–CL = 18 ns each) and a specified access time of 5.4 ns.
• Burst and Refresh Programmable burst lengths of 1, 2, 4, 8, or full page. Supports auto precharge, auto refresh and self refresh modes (self refresh not available on AT devices).
• Power Single-supply operation: 3.0 V to 3.6 V (single 3.3 V ±0.3 V per datasheet).
• Package 54-pin TSOP II (0.400", 10.16 mm width) plastic package for standard board-level mounting.
• Operating Range Industrial temperature rating of −40°C to +85°C (TA).
• Standards Compliance PC100- and PC133-compliant as specified in the datasheet.

Typical Applications

• PC memory subsystems Use in systems targeting PC100/PC133-compliant SDRAM implementations where parallel SDRAM is required.
• Embedded computing Provides 256 Mbit parallel SDRAM for embedded systems that require synchronous SDRAM with programmable burst modes.
• Industrial equipment Memory subsystems in equipment operating across −40°C to +85°C where standard TSOP II board-level packaging is preferred.

Unique Advantages

• High clock-rate operation: 167 MHz (-6A) supports increased data throughput for parallel SDRAM designs.
• Deterministic timing: 3-3-3 RCD–RP–CL timing (18 ns each) and a 5.4 ns access time provide predictable latency for system timing closure.
• Flexible burst modes: Programmable burst lengths (1, 2, 4, 8, full page) enable optimization for different access patterns.
• Banked memory architecture: Internal banks hide row access and precharge delays to improve effective access efficiency.
• Industrial temperature support: −40°C to +85°C rating supports deployment in temperature-sensitive environments.
• Standard TSOP II footprint: 54-pin TSOP II package simplifies integration into designs using established DRAM board layouts.

Why Choose IC DRAM 256MBIT PAR 54TSOP II?

The MT48LC16M16A2P-6A XIT:G delivers a synchronous, parallel SDRAM solution with clear, datasheet-specified timing (3-3-3 at 167 MHz), programmable burst operation, and a 16M × 16 organization that meets PC100/PC133-class requirements. Its combination of predictable timing, banked architecture, and standard packaging makes it suitable for system memory roles in embedded and industrial designs.

With a single 3.0 V–3.6 V supply range and an industrial temperature window of −40°C to +85°C, this device is intended for applications that require established SDRAM features—auto refresh, auto precharge and self refresh modes—within a board-level 54-pin TSOP II footprint.