MT48LC16M16A2P-6A:D TR

The MT48LC16M16A2P-6A:D TR is a 256 Mbit parallel SDRAM device from Micron Technology Inc., organized as 16M × 16 with internal bank architecture. It is a fully synchronous SDR SDRAM designed for board-level system memory applications that require a 3.3 V single-supply, positive-edge clocked memory solution.

Designed for synchronous operation up to a 167 MHz clock frequency (speed grade -6A) and packaged in a 54-pin TSOP II (0.400", 10.16 mm width), the device provides programmable burst operation, refresh management, and timing options useful for systems requiring predictable, clocked DRAM behavior within a 0°C to +70°C ambient range.

Key Features

• Core / Architecture Fully synchronous SDR SDRAM with signals registered on the positive edge of the system clock and internal, pipelined operation to allow column address changes every clock cycle.
• Memory Organization & Capacity 256 Mbit capacity organized as 16M × 16 (4M × 16 × 4 banks), providing four internal banks to reduce row access/precharge latency.
• Performance & Timing Supports a clock frequency up to 167 MHz (speed grade -6A) with documented timing targets (3-3-3) and an access time specification of 5.4 ns.
• Bus & Signaling Parallel SDRAM interface with LVTTL-compatible inputs and outputs; single-supply operation at 3.3 V (specified 3.0 V to 3.6 V).
• Refresh & Power Management Auto refresh and self-refresh modes are supported; the device implements standard refresh counts (8192 cycles) as defined in the datasheet.
• Package & Temperature 54-pin TSOP II (0.400", 10.16 mm width) plastic package for board-level mounting; operating ambient temperature 0°C to +70°C (TA).

Typical Applications

• Board-level memory expansion — Use as a 256 Mbit parallel SDRAM memory device where a 54-pin TSOP II footprint is required.
• Synchronous system memory — For systems operating from a single 3.3 V supply with clocked SDRAM at up to 167 MHz and deterministic, positive-edge registered signalling.
• Designs requiring banked DRAM — Four internal banks and programmable burst lengths enable efficient row/column access patterns for burst-oriented memory transactions.

Unique Advantages

• Deterministic synchronous operation: All signals are registered on the positive clock edge, supporting predictable timing in synchronous system designs.
• Flexible burst and bank architecture: Programmable burst lengths and internal banking allow consecutive column accesses and concealed row operations to improve throughput for burst workloads.
• Standard 3.3 V interface: Single 3.0 V to 3.6 V supply range and LVTTL-compatible I/Os simplify integration with 3.3 V system logic.
• Clear speed-grade specification: -6A grade supports 167 MHz operation with 3-3-3 timing targets, enabling selection based on required clock rate and latency.
• Refresh management built in: Supports auto refresh and self-refresh modes with an 8192-cycle refresh scheme as specified in the datasheet.
• Compact TSOP II footprint: 54-pin TSOP II (400 mil) package provides a standard board-level form factor for surface-mount designs.

Why Choose IC DRAM 256MBIT PAR 54TSOP II?

The MT48LC16M16A2P-6A:D TR combines a standardized 16M × 16 SDRAM organization with fully synchronous operation and documented speed-grade timing for designs that require a 256 Mbit parallel memory device in a 54-pin TSOP II package. Its support for programmable burst lengths, internal bank architecture, and standard 3.3 V signalling makes it suitable for systems requiring predictable, clock-driven memory behavior.

This device is appropriate for engineers specifying board-level SDRAM where package footprint, supply voltage, timing grade, and operating ambient temperature (0°C to +70°C) are primary selection criteria. The combination of documented timing options and refresh management supports straightforward integration into synchronous memory subsystems.

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