MT48LC16M16A2P-75 L:D TR

The MT48LC16M16A2P-75 L:D TR is a 256 Mbit synchronous DRAM (SDR SDRAM) organized as 16M × 16 with a parallel memory interface. It implements a fully synchronous, pipelined architecture with internal banks and programmable burst lengths to support system memory requirements in designs that need a 54-pin TSOP II form factor.

Key electrical and timing characteristics include 133 MHz clock operation (speed grade -75), a 3.0 V to 3.6 V supply range, and an operating temperature range of 0 °C to 70 °C, providing defined performance for commercial-temperature applications.

Key Features

• Memory Architecture 256 Mbit SDRAM organized as 16M × 16 with four internal banks for banked row access and hidden precharge.
• SDR SDRAM, Fully Synchronous All signals are registered on the positive edge of the system clock; internal pipelined operation allows column address changes every clock cycle.
• Speed and Timing 133 MHz clock frequency (speed grade -75) with specified access time of 5.4 ns and timing target of 3-3-3 (RCD-RP-CL) at the -75 grade.
• Programmable Burst and Refresh Programmable burst lengths of 1, 2, 4, 8, or full page; supports auto precharge, auto refresh and self refresh modes (self refresh not available on AT devices). Refresh is 8K cycles.
• Voltage and I/O Single-supply operation over 3.0 V to 3.6 V and LVTTL-compatible inputs and outputs as specified in the device datasheet.
• Package and Mounting 54-pin TSOP II (400 mil / 10.16 mm width) plastic package optimized for PCB-mounted applications.
• Operating Temperature Commercial temperature range: 0 °C to +70 °C (TA).

Unique Advantages

• Standard SDR SDRAM timing support: Allows integration into systems requiring PC100/PC133-class timing (device listed as PC100- and PC133-compliant in datasheet).
• Flexible burst operation: Programmable burst lengths (1, 2, 4, 8, or full page) enable matching transfer patterns to system needs.
• Banked internal architecture: Four internal banks help hide row access and precharge delays for improved sustained throughput in parallel-access designs.
• Compact TSOP II package: 54-pin TSOP II (0.400" / 10.16 mm) provides a space-efficient footprint for board-level memory implementations.
• Single 3.0–3.6 V supply: Simplifies power design by using a standard 3.3 V class supply range.

Why Choose IC DRAM 256MBIT PAR 54TSOP II?

This MT48LC16M16A2P-75 L:D TR device positions itself as a straightforward, standards-aligned 256 Mbit SDRAM option for designs that require a parallel SDRAM interface in a 54-pin TSOP II package. With PC100/PC133-class timing support, programmable burst modes and four internal banks, it is suited to systems needing predictable synchronous DRAM behavior at 133 MHz operation and a 3.0–3.6 V supply.

The device is appropriate for commercial-temperature applications where a compact TSOP II footprint, defined timing grades, and standard refresh and self-refresh features are required. Its documented electrical and timing specifications make it suitable for engineers specifying a 16M × 16 SDRAM component into established memory subsystems.

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