MT48LC16M16A2P-75 IT:D TR
| Part Description |
IC DRAM 256MBIT PAR 54TSOP II |
|---|---|
| Quantity | 1,223 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 133 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of MT48LC16M16A2P-75 IT:D TR – IC DRAM 256MBIT PAR 54TSOP II
The MT48LC16M16A2P-75 IT:D TR is a 256 Mbit synchronous DRAM device organized as 16M × 16 with a parallel memory interface in a 54‑pin TSOP II package. It implements fully synchronous SDRAM architecture with internal pipelined operation and multiple internal banks to support high-throughput, burst-oriented memory transfers.
This device is suited for system memory roles in designs requiring PC100/PC133‑class SDRAM compatibility, a 3.0–3.6 V supply window, and extended operating temperature capability down to −40 °C up to 85 °C.
Key Features
- Memory Core 256 Mbit SDRAM organized as 16M × 16 with 4 internal banks for hidden row access and improved throughput.
- Synchronous SDRAM Operation Fully synchronous design with all signals registered on the positive edge of the system clock; PC100 and PC133 compliant.
- Clock & Timing Rated for 133 MHz clock frequency with an access time listed as 5.4 ns and write cycle time (word/page) of 15 ns.
- Programmable Burst & Refresh Programmable burst lengths of 1, 2, 4, 8 or full page; supports auto precharge, auto refresh and self refresh modes (self refresh noted as not available on AT devices in the datasheet).
- Interface Levels & Supply LVTTL‑compatible inputs/outputs and single‑supply operation across 3.0 V to 3.6 V (typical 3.3 V ±0.3 V).
- Package 54‑pin TSOP II (0.400", 10.16 mm width) standard plastic package (54‑TSOP II OCPL style).
- Extended Temperature Operating temperature range −40 °C to +85 °C (TA), supporting extended environmental operation.
Typical Applications
- PC100/PC133 Memory Systems Use as synchronous DRAM in legacy or compatible systems requiring PC100/PC133 timing and parallel SDRAM interfaces.
- Embedded System Memory Provides board‑level DRAM for embedded platforms where a 256 Mbit parallel SDRAM in a TSOP II package is required.
- Industrial Electronics Suitable for industrial designs that need operation across −40 °C to +85 °C and a 3.0–3.6 V supply range.
Unique Advantages
- Synchronous, pipelined architecture: Enables column address changes every clock cycle for efficient burst transfers and predictable timing.
- PC100/PC133 compliance: Matches established SDRAM system timing targets for 133 MHz operation.
- Flexible burst and refresh modes: Programmable burst lengths and support for auto refresh and self refresh modes provide design flexibility for power and throughput tradeoffs.
- Wide supply tolerance: Operates across 3.0 V to 3.6 V, easing power‑rail design constraints around a standard 3.3 V domain.
- Compact TSOP II package: 54‑pin 0.400" TSOP II footprint balances board space and routing for dense system designs.
- Extended temperature operation: −40 °C to +85 °C rating supports deployment in temperature‑challenging environments.
Why Choose MT48LC16M16A2P-75 IT:D TR?
The MT48LC16M16A2P-75 IT:D TR delivers a 256 Mbit SDRAM solution that combines synchronous, pipelined operation with PC100/PC133 timing and a compact 54‑pin TSOP II package. Its 16M × 16 organization, internal banking, and programmable burst options make it a practical choice for designs that require parallel SDRAM memory with predictable timing and flexible refresh modes.
This device is appropriate for engineers designing system memory subsystems for embedded and industrial applications that need a 3.0–3.6 V supply range and extended temperature capability. The combination of package, timing, and interface characteristics supports straightforward integration into boards targeting PC100/PC133‑class synchronous DRAM interfaces.
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