MT48LC16M16A2P-6A XIT:G TR

IC DRAM 256MBIT PAR 54TSOP II
Part Description

IC DRAM 256MBIT PAR 54TSOP II

Quantity 1,132 Available (as of May 6, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency167 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word Page12 nsPackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization16M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of MT48LC16M16A2P-6A XIT:G TR – IC DRAM 256MBIT PAR 54TSOP II

The MT48LC16M16A2P-6A XIT:G TR is a 256 Mbit synchronous DRAM device organized as 16M × 16 with a parallel memory interface. It implements SDR SDRAM architecture with fully synchronous, pipelined operation suitable for systems requiring a 3.3 V single-supply parallel DRAM.

Targeted at designs that require PC100/PC133-class synchronous DRAM behavior and industrial temperature operation, this device provides programmable burst lengths, internal bank management, and standard SDRAM refresh modes for reliable data storage in board-level memory subsystems.

Key Features

  • Memory Core 256 Mbit SDRAM organized as 16M × 16 with 4 internal banks for hidden row access and precharge.
  • Synchronous, Pipelined Operation Fully synchronous design with all signals registered on the positive edge of the system clock and internal pipelining to allow column address changes every clock cycle.
  • Speed and Timing Clock frequency up to 167 MHz (speed grade -6A) and specified access performance (access time 5.4 ns; write cycle time word/page 12 ns).
  • Programmable Burst and Refresh Programmable burst lengths (1, 2, 4, 8, or full page) with auto precharge, auto refresh and self refresh modes; supports 8192-cycle refresh.
  • Voltage and I/O Single-supply operation at 3.0 V to 3.6 V with LVTTL-compatible inputs and outputs per the datasheet feature set.
  • Package and Temperature 54-pin TSOP II (0.400", 10.16 mm width) in a 54-TSOP (0.400") package; operating temperature range −40 °C to +85 °C (TA).

Typical Applications

  • PC100/PC133-class computing platforms Used as parallel SDRAM memory in systems requiring synchronous DRAM timing and burst access behavior.
  • Industrial controllers and equipment Industrial-temperature operation (−40 °C to +85 °C) supports deployment on board-level memory subsystems in industrial applications.
  • Board-level memory expansion 54-pin TSOP II package enables integration where parallel DRAM density and standard TSOP footprint are required.

Unique Advantages

  • Synchronous, predictable timing: Fully synchronous operation and registered inputs ensure repeatable timing behavior for system design and verification.
  • Flexible burst control: Programmable burst lengths (1, 2, 4, 8 or full page) deliver adaptable data transfer patterns for different access profiles.
  • Robust refresh management: Auto refresh and self refresh modes plus 8192 refresh cycles support data retention without external intervention.
  • Industry temperature support: −40 °C to +85 °C operating range suits applications requiring extended temperature performance.
  • Standard 3.3 V single-supply: Operates from 3.0 V to 3.6 V, simplifying power rail requirements on legacy and contemporary boards.
  • Compact TSOP II package: 54-pin TSOP II footprint provides a board-level package option for parallel SDRAM integration.

Why Choose MT48LC16M16A2P-6A XIT:G TR?

The MT48LC16M16A2P-6A XIT:G TR delivers a 256 Mbit parallel SDRAM solution with synchronous, pipelined operation and PC100/PC133-class timing, packaged in a 54-pin TSOP II. Its feature set — including programmable burst lengths, internal banks, and standard refresh modes — makes it suited for board-level memory subsystems that require deterministic timing and industrial temperature operation.

This device is appropriate for engineers specifying a 3.3 V parallel SDRAM with 16M × 16 organization, especially where a TSOP II footprint and extended temperature range are required. Its standard SDRAM feature set supports straightforward integration into systems that depend on synchronous DRAM behavior and reliable refresh management.

Request a quote or submit an inquiry for pricing and availability of the MT48LC16M16A2P-6A XIT:G TR to receive detailed lead-time and procurement information.

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