MT48LC16M16A2P-75 IT:D

IC DRAM 256MBIT PAR 54TSOP II
Part Description

IC DRAM 256MBIT PAR 54TSOP II

Quantity 324 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency133 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word Page15 nsPackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization16M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of MT48LC16M16A2P-75 IT:D – IC DRAM 256MBIT PAR 54TSOP II

The MT48LC16M16A2P-75 IT:D is a 256 Mbit SDR SDRAM organized as 16M × 16 with four internal banks, supplied in a 54‑pin TSOP II (0.400", 10.16 mm width) package. It implements fully synchronous SDRAM operation with a parallel memory interface and is offered in a 133 MHz speed grade.

This device targets board‑level memory expansion where a 256 Mbit parallel SDRAM is required, delivering PC100/PC133‑class timing, single‑supply 3.3 V operation, and an industrial operating temperature range to address temperature‑sensitive embedded designs.

Key Features

  • Core / Architecture  SDR SDRAM architecture, fully synchronous with all signals registered on the positive edge of the system clock; internal, pipelined operation and internal banks for hiding row access/precharge.
  • Memory Organization  256 Mbit capacity arranged as 16M × 16 with four internal banks.
  • Performance & Timing  PC100‑ and PC133‑compliant timing; specified clock frequency 133 MHz and listed access time of 5.4 ns. Speed grade shown as -75 for 133 MHz operation.
  • Burst & Refresh Control  Programmable burst lengths (1, 2, 4, 8, or full page), auto precharge, concurrent auto precharge/auto refresh modes, and auto refresh with 8K refresh cycles.
  • Power  Single 3.3 V supply (3.3 V ±0.3 V) with listed voltage supply range 3.0 V to 3.6 V.
  • Package  54‑pin TSOP II (0.400", 10.16 mm width) plastic package for board‑level mounting.
  • Operating Temperature  Industrial operating range: -40°C to +85°C (TA) as specified in the product data.
  • Additional Modes  Self refresh and auto refresh modes are supported (note: self refresh availability varies by device option).

Typical Applications

  • Embedded systems memory expansion  Used where a 256 Mbit parallel SDRAM is required for frame buffers, working memory, or system DRAM in industrial embedded designs.
  • Board‑level legacy SDRAM designs  Drop‑in memory option for systems designed to PC100/PC133 timing and parallel SDRAM interfaces.
  • Industrial equipment  Suitable for applications that require operation across an industrial temperature range (-40°C to +85°C).

Unique Advantages

  • High‑density 256 Mbit in TSOP II: Provides substantial memory capacity in a compact 54‑pin TSOP II package for space‑constrained boards.
  • PC100/PC133 timing compliance: Enables predictable timing behavior at 133 MHz clock operation for designs targeting these legacy SDRAM classes.
  • Flexible burst and refresh control: Programmable burst lengths plus auto precharge/auto refresh modes simplify system memory sequencing and refresh management.
  • Single 3.3 V supply: Standard 3.3 V operation (3.0 V–3.6 V) reduces power‑rail complexity in mixed‑voltage systems.
  • Industrial temperature rating: Specified -40°C to +85°C operation supports deployment in temperature‑sensitive industrial environments.
  • Fully synchronous, pipelined operation: Registered inputs and pipelined internal operation allow column addresses to be changed every clock cycle for predictable access patterns.

Why Choose MT48LC16M16A2P-75 IT:D?

The MT48LC16M16A2P-75 IT:D combines a 256 Mbit SDR SDRAM architecture with PC100/PC133 timing characteristics and an industrial temperature rating, making it a practical choice for designs that require reliable, board‑level parallel SDRAM in a compact TSOP II package. Its 16M × 16 organization with four internal banks, programmable burst lengths, and supported refresh modes provide designers with flexible memory behavior and predictable timing at 133 MHz.

This device is suited to engineers specifying legacy PC100/PC133‑class SDRAM or embedded systems needing a 256 Mbit parallel memory solution with 3.3 V operation and industrial temperature capability. The combination of density, timing compliance, and package type supports longer‑term deployment in embedded and industrial designs.

Request a quote or submit a part inquiry to obtain pricing and availability for the MT48LC16M16A2P-75 IT:D.

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