MT48LC16M16A2B4-7E:G

The MT48LC16M16A2B4-7E:G is a 256 Mbit synchronous DRAM device organized as 16M × 16 with a parallel memory interface. It implements fully synchronous SDRAM architecture with registered inputs and internal, pipelined operation suitable for designs requiring PC100/PC133-class SDRAM behavior.

Key value comes from its 133 MHz clock capability, programmable burst operation and internal bank structure for efficient row/column handling, all delivered in a compact 54-ball VFBGA (8×8) package for space-constrained boards operating in commercial temperature ranges.

Key Features

• SDR SDRAM core Fully synchronous operation with all signals registered on the positive edge of the system clock and internal, pipelined operation allowing column address changes every clock cycle.
• Memory organization 256 Mbit capacity organized as 16M × 16 with 4 internal banks for improved access efficiency and hidden row access/precharge.
• Speed and timing Clock frequency 133 MHz; part number -7E corresponds to 133 MHz with 2-2-2 timing (RCD-RP-CL) per datasheet. Listed access time: 5.4 ns.
• Programmable burst and refresh Supports programmable burst lengths (1, 2, 4, 8, or full page), auto precharge, auto refresh and self-refresh modes (self-refresh not available on AT devices as noted in the datasheet).
• Interface compatibility LVTTL-compatible inputs and outputs and a parallel memory interface suitable for PC100/PC133-compliant designs.
• Power Single-supply operation specified from 3.0 V to 3.6 V (3.3 V ±0.3 V typical per datasheet).
• Package and mounting 54-ball VFBGA package (8 mm × 8 mm) in a compact footprint for space-optimized PCB layouts.
• Operating temperature Commercial temperature range: 0°C to 70°C (TA).

Typical Applications

• PC100/PC133-compatible systems — Use where PC100 or PC133-compliant SDRAM timing and 133 MHz clock operation are required.
• Synchronous memory subsystems — For systems that require fully synchronous DRAM with pipelined operation and internal bank management to improve throughput.
• Space-constrained designs — Compact 54-ball VFBGA (8×8) package for boards with limited real estate.

Unique Advantages

• Direct PC100/PC133 alignment: The device supports PC100 and PC133 compliance options and 133 MHz operation which simplifies integration into legacy synchronous memory designs.
• Pipelined, banked architecture: Internal banks and pipelined operation allow column address changes every clock cycle, improving effective data throughput for burst transfers.
• Flexible burst and refresh options: Programmable burst lengths and multiple refresh modes (auto refresh and self-refresh) provide design flexibility for power and performance trade-offs.
• Straightforward power interface: Single 3.0–3.6 V supply range aligns with common 3.3 V system rails, easing power-supply design.
• Compact BGA package: 54-ball VFBGA (8×8) enables smaller board footprint while maintaining parallel SDRAM connectivity.

Why Choose IC DRAM 256MBIT PAR 54VFBGA?

The MT48LC16M16A2B4-7E:G delivers a balanced combination of synchronous SDRAM performance, predictable timing (133 MHz, -7E timing), and a compact package for designs that require a 256 Mbit parallel DRAM solution. Its internal bank architecture, programmable burst lengths and standard refresh modes make it suitable for applications that need deterministic, clock-synchronous memory behavior.

This device is well suited for commercial-temperature systems that demand PC100/PC133-class SDRAM characteristics, a 3.3 V single-supply interface, and a small 54-ball VFBGA footprint for board-level space savings.

Request a quote or submit an RFQ to obtain pricing and availability for the MT48LC16M16A2B4-7E:G for your design and production planning.