MT48LC16M16A2B4-6A XIT:G

The MT48LC16M16A2B4-6A XIT:G is a 256 Mbit volatile SDRAM organized as 16M × 16 with internal bank architecture and a parallel memory interface. It is supplied in a 54‑VFBGA package and operates from a 3.0 V to 3.6 V supply.

Designed for systems that require synchronous parallel DRAM storage, this device offers a 167 MHz speed grade (‑6A) with programmable burst lengths, internal pipelined operation and refresh capabilities, and an operating ambient range of −40°C to 85°C.

Key Features

• Memory Architecture — 16M × 16 organization with four internal banks, providing byte‑wide data access and internal bank management for hidden row access and precharge.
• SDR SDRAM Core — Fully synchronous SDRAM; all signals registered on the positive edge of the system clock and internal pipelined operation for column changes every clock cycle.
• Performance / Timing — Speed grade −6A with a 167 MHz clock frequency and target timing 3‑3‑3 (RCD‑RP‑CL), CL = 18 ns; access time listed at 5.4 ns and write cycle time (word/page) of 12 ns.
• Programmable Burst & Refresh — Programmable burst lengths of 1, 2, 4, 8, or full page; supports auto precharge, auto refresh and self refresh modes and an 8K refresh count.
• Supply & I/O Levels — Single 3.3 V ±0.3 V supply (3.0 V to 3.6 V range) with LVTTL‑compatible inputs and outputs as described in the device datasheet.
• Package — 54‑ball VFBGA (54‑VFBGA, 8 mm × 8 mm) footprint for compact board area and BGA mounting.
• Operating Temperature — Specified ambient operating range of −40°C to +85°C (TA).

Typical Applications

• Embedded system memory — Provides synchronous parallel DRAM storage for designs that require 256 Mbit density and compact BGA packaging.
• Industrial electronics — Suitable for equipment operating in environments covered by the specified −40°C to +85°C ambient temperature range.
• Buffering and temporary storage — Acts as high‑speed temporary storage for systems using a parallel SDRAM interface and programmable burst transfers.

Unique Advantages

• Compact VFBGA package: 54‑ball VFBGA (8×8 mm) reduces PCB footprint for space‑constrained assemblies.
• High‑speed −6A grade: 167 MHz clock frequency and 3‑3‑3 timing support higher throughput in synchronous parallel memory architectures.
• Simplified timing and control: Fully synchronous operation with registered inputs and internal pipelining enables predictable timing behavior on the positive clock edge.
• Flexible burst and refresh modes: Programmable burst lengths and built‑in auto/self refresh options ease memory controller implementation and refresh management.
• Wide supply tolerance: Operation across a 3.0 V to 3.6 V range (3.3 V ±0.3 V) accommodates common 3.3 V system rails.
• Industrial temperature capability: Specified operation from −40°C to +85°C supports deployment in ambient environments within that range.

Why Choose MT48LC16M16A2B4-6A XIT:G?

The MT48LC16M16A2B4-6A XIT:G delivers a compact, synchronous parallel DRAM solution with 256 Mbit density, 16M × 16 organization and a 54‑VFBGA package for space‑sensitive designs. With a 167 MHz speed grade, programmable burst lengths and built‑in refresh modes, it supports predictable, high‑speed memory operations while operating from a standard 3.3 V supply.

This device is suited to designers and procurement teams seeking a Micron‑sourced SDRAM that balances density, timing flexibility and a small BGA footprint for embedded, industrial and parallel‑interface memory applications.

Request a quote or contact sales to verify availability, lead times and pricing for the MT48LC16M16A2B4-6A XIT:G.