MT48LC16M16A2B4-6A XIT:G TR
| Part Description |
IC DRAM 256MBIT PAR 54VFBGA |
|---|---|
| Quantity | 593 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-VFBGA (8x8) | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 167 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 12 ns | Packaging | 54-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of MT48LC16M16A2B4-6A XIT:G TR – IC DRAM 256MBIT PAR 54VFBGA
The MT48LC16M16A2B4-6A XIT:G TR is a 256 Mbit volatile SDRAM device with a parallel memory interface and a 54‑VFBGA (8×8) package. It implements a 16M × 16 memory organization with internal bank architecture and fully synchronous operation for systems that require parallel SDRAM memory.
This device targets designs that need synchronous parallel DRAM with up to 167 MHz clock frequency, single‑supply operation at 3.0–3.6 V, and an extended operating temperature range of −40°C to +85°C.
Key Features
- SDR SDRAM core Fully synchronous SDRAM architecture with all signals registered on the positive edge of the system clock.
- Memory organization & capacity 256 Mbit total capacity with a 16M × 16 organization and internal banks for improved row access/precharge handling.
- Performance / Timing Speed grade -6A supporting a 167 MHz clock frequency. Datasheet timing table lists RCD = RP = CL = 3 (18 ns) for the -6A grade; typical access time listed as 5.4 ns.
- Burst & refresh Programmable burst lengths of 1, 2, 4, 8, or full page; supports auto refresh and self refresh (standard; low‑power variants are available according to datasheet options).
- Voltage & signaling Single 3.0 V to 3.6 V supply range with LVTTL‑compatible inputs/outputs as described in the datasheet.
- Package 54‑VFBGA (54‑ball VFBGA, 8×8) compact package (supplier device package: 54‑VFBGA (8×8)).
- Operating temperature Specified operating ambient range of −40°C to +85°C (TA).
- Standards & compliance Datasheet lists PC100 and PC133 compliance for the 256 Mb family and fully synchronous, pipelined internal operation (as documented for this product family).
Typical Applications
- Parallel memory subsystems Acts as system DRAM in designs that require a parallel SDRAM interface and 256 Mbit capacity.
- Buffering and frame storage Serves as a high‑speed buffer or temporary storage element where synchronous access and programmable burst lengths are required.
- Industrial electronics Suitable for systems operating across −40°C to +85°C that require a 3.0–3.6 V SDRAM solution with 167 MHz clock capability.
Unique Advantages
- High clock capability: Allows operation up to 167 MHz (speed grade -6A), enabling higher throughput in parallel SDRAM systems.
- Flexible burst and bank architecture: Programmable burst lengths and internal banks permit efficient memory access patterns and reduced latency for consecutive column accesses.
- Industrial temperature range: Specified for −40°C to +85°C, supporting deployment in temperature‑sensitive environments.
- Single 3 V supply operation: Operates on a single 3.0–3.6 V supply, simplifying power rail requirements for compatible systems.
- Compact VFBGA package: 54‑ball VFBGA (8×8) package provides a compact footprint for space‑constrained designs.
- Standard SDRAM feature set: Includes auto precharge, auto refresh and self‑refresh options plus LVTTL‑compatible I/O as documented in the product family datasheet.
Why Choose MT48LC16M16A2B4-6A XIT:G TR?
The MT48LC16M16A2B4-6A XIT:G TR offers a synchronous parallel DRAM option that combines a 256 Mbit capacity, 16M × 16 organization, and 167 MHz operation in a compact 54‑VFBGA package. Its programmable burst lengths, internal bank architecture, and support for auto/self refresh modes provide deterministic behavior for designs needing predictable synchronous memory performance.
This device is well suited to designs that require a straightforward parallel SDRAM component with a defined operating voltage range (3.0–3.6 V) and an extended ambient temperature range. Choose this part when you need a documented SDRAM solution with timing and package details available in the product datasheet.
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