MT47H32M16NF-25E AAT:H TR
| Part Description |
IC DRAM 512MBIT PARALLEL 84FBGA |
|---|---|
| Quantity | 1,373 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 2 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 84-FBGA (8x12.5) | Memory Format | DRAM | Technology | SDRAM - DDR2 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 400 ps | Grade | Automotive | ||
| Clock Frequency | 400 MHz | Voltage | 1.7V ~ 1.9V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 105°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 84-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | AEC-Q100 | ECCN | EAR99 | HTS Code | 8542.32.0028 |
Overview of MT47H32M16NF-25E AAT:H TR – 512 Mbit DDR2 SDRAM, 84‑FBGA
The MT47H32M16NF-25E AAT:H TR is a 512 Mbit DDR2 SDRAM organized as 32M × 16 with a parallel memory interface. It provides DDR2-type memory architecture with a 400 MHz clock frequency and is offered in an 84‑TFBGA (84‑FBGA, 8×12.5) package.
Designed and manufactured by Micron Technology Inc., this device targets designs that require compact, qualified SDRAM with automotive-grade qualification and a wide operating temperature range for demanding environments.
Key Features
- Memory Architecture 32M × 16 organization delivering 512 Mbit of volatile DRAM in a parallel DDR2 format suitable for systems requiring synchronous DRAM.
- Performance / Timing DDR2 operation with a 400 MHz clock frequency and 400 ps access time; write cycle (word page) time specified at 15 ns.
- Power Operates from a 1.7 V to 1.9 V supply range consistent with DDR2 low-voltage operation.
- Package Supplied in an 84‑TFBGA package (84‑FBGA, 8×12.5), providing a compact footprint for board-level integration.
- Temperature and Qualification Rated for operation from −40°C to 105°C (TA) and qualified to AEC‑Q100, indicating automotive-grade qualification.
Typical Applications
- Automotive electronic systems AEC‑Q100 qualification and −40°C to 105°C operating range make the device suitable for automotive memory subsystems.
- Embedded DDR2 memory designs Parallel DDR2 interface and 512 Mbit capacity for systems that require synchronous DRAM storage in a 32M × 16 organization.
- Compact PCB designs The 84‑TFBGA package supports space-constrained board layouts where a small BGA footprint is required.
Unique Advantages
- AEC‑Q100 Qualified: Provides automotive-grade qualification for designs that require standardized automotive reliability assurance.
- Wide Operating Temperature: −40°C to 105°C rating supports deployment in temperature-demanding environments.
- DDR2 Performance at 400 MHz: 400 MHz clock frequency and 400 ps access time deliver synchronous DDR2 timing for compatible systems.
- Low-Voltage Operation: 1.7 V to 1.9 V supply range aligns with DDR2 low-voltage power domains.
- Compact BGA Package: 84‑TFBGA (84‑FBGA, 8×12.5) package enables high-density board integration.
Why Choose IC DRAM 512MBIT PARALLEL 84FBGA?
The MT47H32M16NF-25E AAT:H TR combines DDR2 synchronous memory architecture, a compact 84‑TFBGA package, and automotive-grade qualification to address designs that require reliable, temperature-tolerant DRAM in a small form factor. Its specified timing, voltage range, and organization make it suitable for engineers specifying DDR2 parallel memory with known electrical and thermal limits.
Manufactured by Micron Technology Inc., this 512 Mbit DDR2 device is positioned for customers seeking a qualified, compact DRAM component for automotive and similarly demanding embedded memory applications.
Request a quote or submit an inquiry to receive pricing and lead-time information for the MT47H32M16NF-25E AAT:H TR.
