MT47H32M16NF-25E AAT:H

The MT47H32M16NF-25E AAT:H is a 512 Mbit volatile DRAM device organized as 32M × 16 and implemented in DDR2 SDRAM technology. It provides a parallel memory interface with a 400 MHz clock frequency and a 400 ps access time.

Designed for systems requiring AEC-Q100 qualification and extended operating range, this automotive-grade device supports a 1.7 V to 1.9 V supply and operates from -40°C to 105°C in an 84-TFBGA (84-FBGA, 8×12.5) package.

Key Features

• Memory Architecture 512 Mbit capacity organized as 32M × 16 in DDR2 SDRAM format, providing parallel DRAM storage.
• Performance 400 MHz clock frequency and 400 ps access time for deterministic DDR2 timing characteristics.
• Voltage and Power Low-voltage operation with a supply range of 1.7 V to 1.9 V to match DDR2 power domains.
• Automotive Qualification AEC-Q100 qualification and listed as Automotive grade for designs requiring industry-recognized component qualification.
• Operating Temperature Extended temperature range from -40°C to 105°C (TC) to support high-temperature environments.
• Package and Mounting Delivered in an 84-TFBGA (84-FBGA, 8×12.5) package suitable for surface-mount integration on compact PCBs.
• Timing Write cycle time (word page) specified at 15 ns to match system timing requirements.

Typical Applications

• Automotive Electronics AEC-Q100-qualified DDR2 memory for automotive modules that require an industry-qualified memory component and extended temperature operation.
• Systems with Parallel DDR2 Interfaces Parallel DDR2 DRAM support for designs needing 32M × 16 organization and 512 Mbit density for system memory expansion.
• High-Temperature Environments Use in equipment that operates across -40°C to 105°C where extended temperature tolerance for DRAM components is required.

Unique Advantages

• AEC-Q100 Qualification: Provides a qualified component option for designs targeting automotive and similarly demanding environments.
• Automotive Grade: Specified as Automotive grade to align with applications that require that classification.
• Low-Voltage DDR2 Operation: 1.7 V–1.9 V supply range enables integration into low-voltage DDR2 power domains.
• Compact BGA Package: 84-TFBGA (8×12.5) package supports space-constrained board layouts.
• Deterministic Timing: 400 MHz clock and 400 ps access time combined with 15 ns write cycle time provide defined DDR2 timing parameters for system design.
• Extended Temperature Range: -40°C to 105°C operation supports use in higher temperature applications.

Why Choose MT47H32M16NF-25E AAT:H?

The MT47H32M16NF-25E AAT:H positions itself as a 512 Mbit DDR2 parallel DRAM option that pairs defined DDR2 performance characteristics with automotive-grade qualification. Its combination of 32M × 16 organization, 400 MHz clock frequency, and AEC-Q100 qualification makes it suitable for designs that require a qualified DDR2 memory device within an extended temperature envelope.

Manufactured by Micron Technology Inc., this device is appropriate for engineers specifying qualified memory components for automotive and other temperature-demanding applications where a compact 84-TFBGA package and low-voltage DDR2 operation are required.

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