MT47H32M16NF-187E:H TR
| Part Description |
IC DRAM 512MBIT PAR 84FBGA |
|---|---|
| Quantity | 1,800 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 84-FBGA (8x12.5) | Memory Format | DRAM | Technology | SDRAM - DDR2 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 350 ps | Grade | Commercial (Extended) | ||
| Clock Frequency | 533 MHz | Voltage | 1.7V ~ 1.9V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 85°C (TC) | Write Cycle Time Word Page | 15 ns | Packaging | 84-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of MT47H32M16NF-187E:H TR – IC DRAM 512MBIT PAR 84FBGA
The MT47H32M16NF-187E:H TR is a 512 Mbit volatile memory device implemented as DDR2 SDRAM and organized as 32M × 16. It is supplied in an 84-TFBGA package and offers a parallel memory interface.
Key electrical and timing characteristics include a 533 MHz clock frequency, 350 ps access time, a write cycle time (word page) of 15 ns, and an operating supply range of 1.7 V to 1.9 V. The device is specified for operation from 0°C to 85°C (TC).
Key Features
- Memory Type Volatile DRAM implemented as SDRAM - DDR2, organized 32M × 16 for a total of 512 Mbit.
- Performance 533 MHz clock frequency with a 350 ps access time and a write cycle time (word page) of 15 ns for deterministic timing.
- Power Operating supply voltage range of 1.7 V to 1.9 V.
- Interface Parallel memory interface suitable for DDR2 system integration.
- Package 84-TFBGA package (supplier device package: 84-FBGA, 8 × 12.5).
- Operating Temperature Specified operating temperature range of 0°C to 85°C (TC).
- Memory Format & Mounting DRAM memory format with standard BGA-style mounting.
Typical Applications
- Board-Level Memory Provides 512 Mbit DDR2 parallel DRAM capacity for board implementations requiring this density and organization.
- Memory Subsystems Fits designs that require a 32M × 16 DDR2 device with defined timing and supply characteristics.
- Prototype and Development Useful in development platforms and prototype systems where specified DDR2 electrical and timing parameters are needed.
Unique Advantages
- DDR2 Parallel Architecture: Standard DDR2 SDRAM organization (32M × 16) provides a familiar interface for parallel memory designs.
- Defined Timing Parameters: 350 ps access time and 15 ns write cycle time supply clear timing targets for system integration and validation.
- Compact BGA Package: 84-TFBGA (84-FBGA, 8 × 12.5) package supports BGA mounting for higher board density.
- Low-Voltage Operating Range: 1.7 V to 1.9 V supply range defines the power domain for system power design.
- Commercial Temperature Range: Rated for 0°C to 85°C operation to match many commercial-grade system requirements.
Why Choose MT47H32M16NF-187E:H TR?
The MT47H32M16NF-187E:H TR offers a 512 Mbit DDR2 SDRAM solution in a compact 84-TFBGA package with clearly specified electrical and timing parameters. Its 32M × 16 organization, 533 MHz clock frequency, and defined access and cycle times make it straightforward to integrate into designs that require parallel DDR2 memory.
This device is suitable for engineers and procurement teams specifying a fixed-density DDR2 DRAM with a narrow supply voltage window and a commercial operating temperature range. The explicit timing, voltage, package, and temperature specifications simplify system-level design decisions and validation.
Request a quote or contact sales to discuss availability, lead times, and pricing for the MT47H32M16NF-187E:H TR.
