MT47H32M16BN-37E:D TR

The MT47H32M16BN-37E:D TR is a 512 Mbit DDR2 SDRAM device in an 84-ball FBGA package, offering parallel memory interface and DDR2 architecture. It delivers industry-standard DDR2 features and timing flexibility in a compact 84‑TFBGA footprint for systems requiring low-voltage, high-speed volatile memory.

Key Features

• Memory type & architecture DDR2 SDRAM, volatile memory with 512 Mbit capacity and a memory organization of 32M × 16 (configured as 8M × 16 × 4 banks as noted in the datasheet).
• Performance & timing Supports a clock frequency of 267 MHz and an access time of 500 ps; timing options include programmable CAS latency, posted CAS additive latency and selectable burst lengths (BL = 4 or 8).
• DDR2 core features 4n‑bit prefetch architecture, DLL to align DQ and DQS transitions with CK, differential data strobe (DQS/DQS#) option and on‑die termination (ODT).
• Banking & refresh Four internal banks for concurrent operation and a 64 ms, 8,192‑cycle refresh sequence as specified in the datasheet.
• Voltage & interface VDD/VDDQ = 1.8 V ±0.1 V (product voltage supply specified as 1.7 V–1.9 V) with JEDEC‑standard 1.8 V I/O (SSTL_18‑compatible) and a parallel memory interface.
• Package & mounting 84‑TFBGA (84‑ball FBGA, supplier package 84‑FBGA 10 × 12.5 mm) surface‑mount package for compact board integration.
• Operating conditions Commercial operating temperature: 0 °C to 85 °C (T_C) and write cycle time (word page) of 15 ns.
• Regulatory & options Datasheet lists RoHS compliance and multiple FBGA package revisions and timing grades available for the 512 Mb family.

Unique Advantages

• Low‑voltage DDR2 operation: 1.8 V nominal supply range reduces power envelope consistent with DDR2 system requirements.
• Flexible timing and burst control: Programmable CAS latency, posted CAS additive latency and selectable burst lengths enable tuning for varied memory transfer profiles.
• Compact FBGA footprint: 84‑ball FBGA (10 × 12.5 mm) minimizes PCB area while supporting a parallel DDR2 interface.
• On‑die features for signal integrity: DLL, on‑die termination and differential DQS support help align and condition data timing at DDR2 speeds.
• Multi‑bank concurrency: Four internal banks improve concurrent access handling as specified in the device documentation.
• Standards‑based I/O: JEDEC‑standard 1.8 V I/O (SSTL_18‑compatible) provides predictable integration with DDR2 memory controllers.

Why Choose IC DRAM 512MBIT PAR 84FBGA?

The MT47H32M16BN-37E:D TR positions itself as a compact, standards‑based DDR2 memory device for designs requiring 512 Mbit of volatile storage in an 84‑FBGA package. With low‑voltage operation, programmable timing options and on‑die features such as DLL and ODT, it provides timing flexibility and signal conditioning for DDR2 system integration.

This device is suited to commercial temperature designs (0 °C to 85 °C) that need a parallel DDR2 memory element with compact packaging and JEDEC‑compatible I/O. The documented timing grades, package revisions and RoHS compliance options support consistent procurement and BOM specification.

For pricing, availability and lead‑time information, request a quote or submit an inquiry to receive a formal quotation and technical ordering details.