MT47H128M4SH-25E:H

The MT47H128M4SH-25E:H is a 512 Mbit volatile memory device implemented as DDR2 SDRAM with a parallel memory interface and organized as 128M × 4. It is supplied in a 60-TFBGA (60-FBGA, 8×10) package and operates from a 1.7 V to 1.9 V power rail.

Designed for applications requiring board-level DDR2 memory, the device provides a 400 MHz clock frequency and a 400 ps access time, and is specified for operation across a 0°C to 85°C temperature range.

Key Features

• Memory Core 512 Mbit DDR2 SDRAM organized as 128M × 4, implemented as volatile DRAM for standard temporary data storage.
• Performance 400 MHz clock frequency and 400 ps access time to support timely memory transactions in systems using a parallel DDR2 interface.
• Timing Write cycle time (word page) specified at 15 ns for write timing considerations in system design.
• Power Low-voltage operation with a supply range of 1.7 V to 1.9 V, compatible with DDR2 voltage rails.
• Package 60-TFBGA (60-FBGA, 8×10) package for compact board-level integration and defined footprint constraints.
• Operating Temperature Specified commercial temperature range of 0°C to 85°C for temperature-dependent system qualification.

Typical Applications

• Parallel DDR2 memory subsystems — Used where a 512 Mbit parallel DDR2 SDRAM device is required for board-level memory expansion or buffering.
• Compact PCB designs — The 60-FBGA (8×10) package supports space-constrained layouts that require surface-mount DRAM.
• Low-voltage systems — Suitable for systems designed around a 1.7 V–1.9 V DDR2 power rail.
• Commercial-temperature electronics — Applicable in designs that operate within a 0°C to 85°C ambient range.

Unique Advantages

• Standard DDR2 interface: Provides a parallel DDR2 SDRAM architecture (128M × 4) for compatibility with DDR2-based memory controllers and designs.
• Specified timing metrics: 400 MHz clock frequency and 400 ps access time give clear, verifiable performance parameters for system timing analysis.
• Defined write timing: 15 ns write cycle time (word page) simplifies timing budget and memory controller configuration.
• Low-voltage operation: 1.7 V–1.9 V supply range aligns with DDR2 voltage domains to assist power-rail planning.
• Compact package footprint: 60-TFBGA (60-FBGA, 8×10) enables higher board density and predictable assembly considerations.
• Commercial temperature rating: 0°C to 85°C specification supports deployment in standard commercial-environment products.

Why Choose MT47H128M4SH-25E:H?

The MT47H128M4SH-25E:H delivers a clear, specification-driven DDR2 SDRAM option: 512 Mbit capacity in a 128M × 4 organization, defined timing (400 MHz clock, 400 ps access time, 15 ns write cycle), and low-voltage operation (1.7 V–1.9 V). Its 60-FBGA (8×10) package and 0°C–85°C operating range make it suitable for designs that require compact, board-level DDR2 memory with verifiable electrical and timing parameters.

This part is appropriate for engineers and procurement teams specifying a parallel DDR2 memory device with explicit clock, timing, voltage, and package requirements, offering straightforward integration into systems that conform to these DDR2 characteristics.

If you need pricing, availability or a formal quote for the MT47H128M4SH-25E:H, request a quote or submit an inquiry to receive further details and procurement information.