MT47H128M4CB-5E:B TR

The MT47H128M4CB-5E:B TR is a 512 Mbit DDR2 SDRAM organized as 128M × 4 with 4 internal banks in a 60-ball FBGA package. It implements a DDR2 SDRAM core with 4n-bit prefetch architecture and supports a parallel memory interface at a clock frequency of 200 MHz.

This device targets systems requiring a compact, parallel DDR2 memory solution with a commercial operating temperature range of 0°C to 85°C and a supply range of 1.7 V to 1.9 V (Vdd, VddQ ≈ 1.8 V ±0.1 V).

Key Features

• Memory Architecture 128M × 4 organization providing 512 Mbit capacity, implemented as 32 Meg × 4 × 4 banks for concurrent bank operation.
• DDR2 SDRAM Core JEDEC-standard 1.8 V I/O with differential data strobe (DQS/DQS#) option, DLL alignment of DQ and DQS with CK, programmable CAS latency and posted CAS additive latency.
• Performance & Timing Specified clock frequency of 200 MHz with an access time of 600 ps and a write cycle time (word/page) of 15 ns; timing grades and data rates are defined in the datasheet.
• Power Low-voltage operation with Vdd and VddQ at approximately 1.8 V (1.7 V to 1.9 V supply range).
• Signal Integrity On-die termination (ODT) and adjustable data-output drive strength to support signal margin tuning on high-speed DDR2 interfaces.
• Refresh & Reliability 8,192-cycle refresh (64 ms) and standard DDR2 refresh mechanisms are implemented for data retention.
• Package & Temperature 60-ball FBGA package (60-FBGA) in a commercial temperature grade with specified operating temperature 0°C to 85°C.
• Standards Compliance Supports JEDEC clock jitter specification and selectable burst lengths of 4 or 8 for burst-oriented transfers.

Unique Advantages

• Compact, board-friendly footprint: 60-ball FBGA package minimizes board area for space-constrained designs.
• Flexible memory timing: Programmable CAS latency, additive latency and selectable burst lengths allow tuning for diverse system timing requirements.
• Low-voltage DDR2 operation: Operates at 1.7 V–1.9 V (Vdd/VddQ ≈ 1.8 V) with JEDEC-standard I/O for integration into low-voltage DDR2 designs.
• Signal integrity features: On-die termination and adjustable output drive strength help optimize signal margins on high-speed parallel interfaces.
• Deterministic refresh behavior: 8,192-cycle refresh (64 ms) provides defined retention maintenance consistent with DDR2 requirements.
• Documented by manufacturer: Product and timing options are detailed in the Micron datasheet for design and qualification reference.

Why Choose IC DRAM 512MBIT PARALLEL 60FBGA?

The MT47H128M4CB-5E:B TR combines a 512 Mbit DDR2 memory organization (128M × 4) with DDR2 signal integrity features and a compact 60-FBGA footprint, making it suitable for systems that require parallel DDR2 memory in a small package and commercial temperature operation. Its programmable timing, DLL alignment, ODT and adjustable drive strength enable designers to tune memory behavior to match system timing and signal requirements.

This device is appropriate for designs that specify a 512 Mbit parallel DDR2 SDRAM implemented as a 128M × 4 device and that operate within the specified 1.7 V–1.9 V supply range and 0°C to 85°C temperature window. Detailed timing grades and option information are provided in the manufacturer’s datasheet for integration and verification.

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