MT47H128M4B6-3:D TR
| Part Description |
IC DRAM 512MBIT PARALLEL 60FBGA |
|---|---|
| Quantity | 1,520 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 60-FBGA | Memory Format | DRAM | Technology | SDRAM - DDR2 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 450 ps | Grade | Commercial (Extended) | ||
| Clock Frequency | 333 MHz | Voltage | 1.7V ~ 1.9V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 85°C (TC) | Write Cycle Time Word Page | 15 ns | Packaging | 60-FBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 128M x 4 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B2A | HTS Code | 8542.32.0024 |
Overview of MT47H128M4B6-3:D TR – IC DRAM 512MBIT PARALLEL 60FBGA
The MT47H128M4B6-3:D TR from Micron Technology Inc. is a 512 Mbit volatile DRAM device implemented as DDR2 SDRAM with a parallel memory interface. It is organized as 128M × 4 and designed for systems that require a compact, standard DDR2 memory component with defined timing and voltage characteristics.
This device targets designs that specify DDR2 SDRAM technology and require operation at a 333 MHz clock rate, 1.7 V–1.9 V supply, and a 60-FBGA package footprint, delivering predictable timing and integration into parallel-memory architectures.
Key Features
- Memory Core 512 Mbit total capacity organized as 128M × 4, implemented as DDR2 SDRAM (volatile memory).
- Performance & Timing 333 MHz clock frequency, 450 ps access time and a 15 ns write cycle time (word page) for defined read/write timing characteristics.
- Interface Parallel memory interface compatible with DDR2 SDRAM signaling and system architectures that accept parallel DRAM devices.
- Power Operates from a 1.7 V to 1.9 V supply range.
- Package & Mounting Supplied in a 60-FBGA package (60-FBGA / SupplierDevicePackage: 60-FBGA) suitable for board-level mounting.
- Operating Range Specified operating temperature range of 0°C to 85°C (TC).
Unique Advantages
- Defined DDR2 timing: Access time (450 ps) and write cycle time (15 ns) provide clear, verifiable timing parameters for system timing budgets.
- 512 Mbit capacity in a compact package: 128M × 4 organization delivered in a 60-FBGA package for space-constrained board designs.
- Low-voltage operation: 1.7 V–1.9 V supply range aligns with designs targeting lower DDR2 core voltages.
- Parallel DDR2 interface: Direct compatibility with parallel DDR2 memory architectures simplifies integration where that interface is required.
- Commercial temperature rating: 0°C to 85°C operating range for typical commercial and industrial applications within that temperature window.
Why Choose IC DRAM 512MBIT PARALLEL 60FBGA?
The MT47H128M4B6-3:D TR provides a straightforward DDR2 SDRAM solution with explicit timing, voltage, and package specifications from Micron Technology Inc. Its 512 Mbit capacity, parallel interface, and 60-FBGA package make it suitable for designs that require a known DDR2 memory element with defined electrical and thermal envelopes.
This part is appropriate for engineers and procurement teams specifying DDR2 DRAM at 333 MHz and 1.7 V–1.9 V operation, offering predictable integration and long-term clarity on device electrical and timing characteristics backed by manufacturer datasheet specifications.
Request a quote or submit an inquiry to receive pricing and availability information for the MT47H128M4B6-3:D TR.
