MT47H128M4CB-37E:B

The MT47H128M4CB-37E:B is a 512 Mbit DDR2 SDRAM organized as 128M × 4 with a parallel memory interface in a 60-ball FBGA package. It implements DDR2 architecture with a 4n-bit prefetch, programmable CAS latency and features such as on-die termination and a DLL for DQ/DQS alignment.

Designed for commercial-temperature systems, this device operates from 0°C to 85°C and supports low-voltage operation at 1.7 V–1.9 V, making it suitable where compact, low-voltage DDR2 memory is required on board-level designs.

Key Features

• Memory Organization and Capacity 512 Mbit total capacity arranged as 128M × 4 with 4 internal banks for concurrent operation and selectable burst lengths of 4 or 8.
• DDR2 Architecture DDR2 SDRAM core with 4n-bit prefetch, DLL to align DQ and DQS transitions with CK, and programmable CAS latency for flexible timing.
• Interface and Signaling Parallel memory interface with JEDEC-standard 1.8 V I/O (SSTL_18-compatible) and optional differential data strobe (DQS/DQS#) and duplicate output strobe (RDQS for x8).
• Power and Voltage Low-voltage operation: VDD and VDDQ nominally +1.8 V ±0.1 V (product spec listed supply 1.7 V–1.9 V), supporting reduced power consumption compared with higher-voltage memories.
• Timing and Performance Specified clock frequency 267 MHz and access time of 500 ps, with write cycle time (word page) of 15 ns; programmable timing options per DDR2 speed grades in the datasheet.
• System Reliability On-die termination (ODT), 64 ms/8,192-cycle refresh support and support for JEDEC clock jitter specifications to aid signal integrity and reliable operation.
• Package and Thermal Supplied in a 60-ball FBGA package (60-FBGA) for compact board-level integration; operating temperature range 0°C to 85°C (commercial).
• Standards and Compliance JEDEC-standard DDR2 signaling and RoHS compliant per the device datasheet.

Typical Applications

• Parallel DDR2 system memory Use as 512 Mbit parallel DDR2 SDRAM in systems that require a 128M × 4 memory organization and standard DDR2 signaling.
• Compact board-level memory The 60-FBGA footprint and 1.7 V–1.9 V supply make it suitable for compact PCB designs where low-voltage DDR2 is required.
• Commercial-temperature electronics Intended for commercial-temperature designs operating between 0°C and 85°C that need DDR2 performance and JEDEC-compliant signaling.

Unique Advantages

• Low-voltage operation: Supports VDD and VDDQ at approximately 1.8 V (1.7 V–1.9 V listed), enabling lower power consumption compared with higher-voltage memories.
• Flexible timing configuration: Programmable CAS latency and selectable burst lengths (4 or 8) allow timing adjustment to match system requirements.
• Signal integrity features: DLL alignment of DQ/DQS, on-die termination, and JEDEC clock jitter support help maintain data integrity at DDR2 speeds.
• Concurrent-bank operation: Four internal banks enable improved access concurrency for burst and interleaved access patterns.
• Compact packaging: 60-ball FBGA package supports dense board-level integration while retaining standard ballout options described in the device documentation.
• Standards compliance: JEDEC-standard 1.8 V I/O and RoHS-compliant device declaration (per datasheet) simplify system-level compliance planning.

Why Choose IC DRAM 512MBIT PAR 60FBGA?

The MT47H128M4CB-37E:B offers a commercially rated DDR2 SDRAM solution with a 512 Mbit capacity, low-voltage operation, and a compact 60-FBGA package. Its DDR2 feature set—programmable CAS latency, on-die termination, DLL alignment and four internal banks—provides flexible timing and signal integrity controls that match a range of board-level memory needs.

This device is appropriate for designers specifying parallel DDR2 memory in commercial-temperature electronics who require JEDEC-standard signaling, configurable timing, and a compact footprint. The documented electrical and timing characteristics support predictable integration and long-term design stability when used within the specified operating conditions.

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