MT46V8M16TG-6T IT:D TR

IC DRAM 128MBIT PAR 66TSOP
Part Description

IC DRAM 128MBIT PAR 66TSOP

Quantity 424 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package66-TSOPMemory FormatDRAMTechnologySDRAM - DDR
Memory Size128 MbitAccess Time700 psGradeIndustrial
Clock Frequency167 MHzVoltage2.3V ~ 2.7VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word Page15 nsPackaging66-TSSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization8M x 16
Moisture Sensitivity Level2 (1 Year)RoHS ComplianceRoHS non-compliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of MT46V8M16TG-6T IT:D TR – IC DRAM 128MBIT PAR 66TSOP

The MT46V8M16TG-6T IT:D TR is a 128 Mbit DDR SDRAM device organized as 8M × 16 with a parallel memory interface in a 66‑TSSOP package. It implements an internal pipelined double-data-rate architecture (two data accesses per clock) with source‑synchronous DQS and an internal DLL for aligned data capture.

Targeted for designs requiring standard DDR memory functionality across multiple speed grades and an industrial operating range, the device delivers up to a 167 MHz clock rate (per provided timing grade), programmable burst lengths, and support for auto/self refresh modes to meet sustained data throughput and system reliability needs.

Key Features

  • Core Architecture Internal pipelined DDR architecture enabling two data transfers per clock cycle; differential clock inputs (CK/CK#) with commands on the positive CK edge.
  • Memory Organization & Capacity 128 Mbit total capacity configured as 8M × 16 with four internal banks for concurrent operation.
  • Timing & Performance Supported clock frequency up to 167 MHz (per -6T speed grade) with an access window ~700 ps and write cycle time (word/page) of 15 ns; programmable burst lengths of 2, 4, or 8.
  • Data Integrity & Timing Features Source‑synchronous data strobe (DQS) with edge alignment for READs and center alignment for WRITEs, plus an on‑chip DLL to align DQ/DQS to CK for reliable timing margins.
  • Power & I/O Core and I/O supply range listed as 2.3 V to 2.7 V; 2.5 V I/O (SSTL_2 compatible) per datasheet options for standard DDR operation.
  • Memory Control & Refresh Supports auto refresh and self refresh modes and provides a data mask (DM) for masking write data; concurrent auto precharge option is supported.
  • Package & Temperature 66‑TSSOP (0.400", 10.16 mm width) package with industrial temperature rating of −40°C to +85°C (TA) for extended environmental use.

Typical Applications

  • PC and module memory Compatibility with common DDR speed grades (PC3200/PC2700/PC2100 family per datasheet timing tables) makes it suitable for DDR module designs and legacy PC memory implementations.
  • Industrial embedded systems Industrial temperature rating (−40°C to +85°C) supports embedded applications that require robust operation across wide ambient conditions.
  • Legacy DDR platform upgrades Available speed grades and standard DDR interface characteristics allow use in existing DDR platforms and designs that require JEDEC‑style DDR SDRAM behavior.

Unique Advantages

  • Double‑data‑rate throughput: Two data transfers per clock cycle increase effective bandwidth without raising clock frequency.
  • Source‑synchronous DQS with DLL: DQS transmission/receipt and on‑chip DLL improve read/write timing alignment and ease system timing closure.
  • Multiple speed grade options: Documented timing grades (including -6T) and programmable burst lengths provide flexibility for different system performance targets.
  • Industrial temperature support: −40°C to +85°C rating enables deployment in temperature‑sensitive embedded and industrial environments.
  • Standard 66‑TSSOP package: Compact TSOP footprint with longer lead option (OCPL) for improved mechanical reliability in dense board layouts.
  • SSTL_2 compatible I/O: 2.5 V I/O support aligns with common DDR signaling standards for system interoperability.

Why Choose MT46V8M16TG-6T IT:D TR?

The MT46V8M16TG-6T IT:D TR provides a standards-based DDR SDRAM building block with a clear set of speed grades, timing features and industrial temperature capability. Its 8M × 16 organization, source‑synchronous DQS, DLL alignment and programmable burst lengths make it appropriate for designs that require conventional DDR behavior, predictable timing parameters, and reliable operation across a wide temperature range.

This device is suitable for system designers and module integrators working with DDR SDRAM interfaces who need a documented 128 Mbit memory option from Micron Technology Inc. that supports multiple timing grades and common DDR operational modes such as auto refresh and self refresh.

If you would like pricing, lead time, or to request a formal quote for MT46V8M16TG-6T IT:D TR, submit a quote request or contact the sales channel for further assistance.

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