MT46V8M16P-6TIT:DTR

The MT46V8M16P-6TIT:DTR is a 128 Mbit parallel DDR SDRAM organized as 8M × 16 with a 66‑TSSOP package. It implements a double-data-rate architecture with internal DLL and bidirectional data strobe support to enable source‑synchronous data capture.

Designed for systems requiring on‑board parallel DDR memory in a compact 66‑TSOP footprint, this device offers industrial temperature operation, a 2.3 V–2.7 V supply range, and timing options consistent with a 167 MHz clock rate (speed grade -6T).

Key Features

• Core Architecture Double Data Rate (DDR) SDRAM with internal, pipelined DDR operation providing two data accesses per clock cycle and an internal DLL to align DQ/DQS with CK.
• Memory Organization 128 Mbit capacity organized as 8M × 16 with four internal banks and support for programmable burst lengths of 2, 4, or 8.
• Performance Rated for a 167 MHz clock frequency (speed grade -6T) with an access time of 700 ps and write cycle time (word/page) of 15 ns.
• Data I/O and Timing Bidirectional data strobe (DQS) transmitted/received with data (x16 devices include two DQS signals, one per byte) and data mask (DM) support for byte‑wise write masking.
• Interface Parallel memory interface with differential clock inputs (CK, CK#) and commands entered on the positive CK edge; DQS is edge‑aligned for READs and center‑aligned for WRITEs.
• Power Operates from a 2.3 V to 2.7 V supply range (VDD/VDDQ), with 2.5 V I/O signaling characteristics documented in the device specification.
• Refresh and Reliability Supports auto refresh and self refresh modes; concurrent auto precharge option and longer lead TSOP (OCPL) for improved reliability.
• Package and Temperature 66‑TSSOP (0.400", 10.16 mm width) plastic package; industrial temperature rating from -40°C to +85°C (TA).

Typical Applications

• Embedded memory subsystems Use as parallel DDR memory where a 128 Mbit x16 device in a 66‑TSSOP package is required.
• FPGA and processor external memory Provides a compact DDR option for designs that need external volatile storage with programmable burst lengths and source‑synchronous DQS.
• Industrial modules Suitable for equipment requiring operation across -40°C to +85°C and a 2.3 V–2.7 V power domain.

Unique Advantages

• DDR source‑synchronous capture: Two data accesses per clock and bidirectional DQS enable accurate, high‑rate data transfers without external timing retiming logic.
• Byte‑level control: Dual DQS and DM on the x16 configuration provide byte‑wise strobe and write‑mask capability for flexible data handling.
• Industrial temperature range: Specified operation from -40°C to +85°C for deployment in temperature‑sensitive environments.
• Compact, reliable package: 66‑TSSOP (OCPL longer lead) offers a small footprint with improved lead robustness for surface mounting.
• Flexible timing and refresh: Programmable burst lengths plus auto and self refresh modes support varied system memory management schemes.
• Standardized low‑voltage I/O: 2.3 V–2.7 V supply and 2.5 V I/O signaling align with documented DDR device requirements for compatible system design.

Why Choose MT46V8M16P-6TIT:DTR?

The MT46V8M16P-6TIT:DTR combines Micron’s DDR SDRAM architecture with a compact 66‑TSSOP package and industrial temperature rating to serve designs that require a 128 Mbit parallel DDR memory solution. Its built‑in DLL, bidirectional DQS, and programmable burst options provide deterministic timing control for source‑synchronous interfaces.

This device is suited to engineers specifying external DDR memory where footprint, industrial temperature operation, and byte‑level control are key design criteria. Documentation and timing options provided in the device specification support integration and long‑term maintenance of system memory designs.

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