MT46V64M8TG-75Z:D
| Part Description |
IC DRAM 512MBIT PARALLEL 66TSOP |
|---|---|
| Quantity | 1,706 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 66-TSOP | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 750 ps | Grade | Commercial | ||
| Clock Frequency | 133 MHz | Voltage | 2.3V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 66-TSSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 64M x 8 | ||
| Moisture Sensitivity Level | 4 (72 Hours) | RoHS Compliance | RoHS non-compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of MT46V64M8TG-75Z:D – IC DRAM 512MBIT PARALLEL 66TSOP
The MT46V64M8TG-75Z:D is a 512 Mbit volatile memory device implemented as SDRAM - DDR with a 64M × 8 organization and a parallel memory interface. It provides synchronous DRAM performance characteristics with a 133 MHz clock frequency and an access time of 750 ps.
This device is intended for systems that require parallel DRAM storage in a compact 66-TSSOP (0.400", 10.16 mm width) package and operates from a 2.3 V to 2.7 V supply over a 0°C to 70°C ambient temperature range.
Key Features
- Core / Technology SDRAM - DDR technology with a parallel interface for synchronous DRAM operation.
- Memory Organization 512 Mbit capacity arranged as 64M × 8 to support byte-wide data paths.
- Performance 133 MHz clock frequency and 750 ps access time deliver predictable timing for synchronous designs; word page write cycle time of 15 ns.
- Power Operates from a 2.3 V to 2.7 V supply range.
- Package 66-TSSOP (0.400", 10.16 mm width) supplier device package for compact board-level integration.
- Environmental / Operating Range Rated for ambient operating temperatures from 0°C to 70°C (TA).
Typical Applications
- Embedded memory expansion For designs requiring a 512 Mbit parallel SDRAM organized as 64M × 8 for temporary data storage.
- System buffering and frame storage Where a 133 MHz synchronous interface and a 15 ns word page write cycle are necessary for buffer management.
- Compact module integration Suited to OEM modules and PCBs that require a 66-TSSOP (0.400") package and a 2.3 V–2.7 V supply.
Unique Advantages
- Predictable synchronous timing: 133 MHz clock and 750 ps access time enable deterministic memory access planning in system designs.
- Byte-wide organization: 64M × 8 memory layout provides straightforward interfacing to parallel data buses.
- Compact board footprint: 66-TSSOP (0.400", 10.16 mm) package supports space-constrained layouts.
- Wide supply compatibility: 2.3 V to 2.7 V operating range allows integration with common DDR supply rails.
- Defined operating range: Specified 0°C to 70°C ambient rating for predictable performance in standard commercial environments.
Why Choose IC DRAM 512MBIT PARALLEL 66TSOP?
The MT46V64M8TG-75Z:D positions itself as a straightforward parallel SDRAM solution offering 512 Mbit capacity, DDR SDRAM technology, and defined synchronous timing (133 MHz, 750 ps access). Its 64M × 8 organization and 15 ns word page write cycle time make it suitable for designs that require deterministic parallel memory behavior.
With a compact 66-TSSOP package and a 2.3 V–2.7 V supply range, this device is well suited for designers targeting compact, board-level memory integration in commercial-temperature systems where a reliable, specification-driven DRAM solution is required.
Request a quote or submit a pricing inquiry to receive availability and lead-time details for the MT46V64M8TG-75Z:D.
