MT46V64M8TG-75:D TR

The MT46V64M8TG-75:D TR is a 512 Mbit DDR SDRAM organized as 64M × 8 in a parallel memory format. Designed as a volatile DRAM device, it delivers synchronous double-data-rate operation for designs that require parallel DDR memory with a compact 66-TSSOP package.

Manufactured by Micron Technology Inc., this device targets systems that need a moderate-density, parallel DDR memory solution with defined operating temperature and voltage ranges for stable integration into embedded and electronic equipment.

Key Features

• Memory Architecture  512 Mbit capacity organized as 64M × 8 provides defined density and byte-wide data organization for parallel DDR memory maps.
• Technology & Interface  SDRAM - DDR technology with a parallel memory interface supports synchronous double-data-rate operation at the specified clock frequency.
• Performance  Specified clock frequency of 133 MHz and an access time of 750 ps enable predictable timing behavior; write cycle (word/page) is 15 ns.
• Power  Operates from a supply voltage range of 2.3 V to 2.7 V, defining the device’s power domain for system power budgeting and rail design.
• Package  66-TSSOP package (0.400", 10.16 mm width) provides a compact footprint for surface-mount assembly; listed supplier device package is 66-TSOP.
• Operating Conditions  Specified ambient operating temperature range is 0°C to 70°C (TA), suitable for commercial-temperature applications.

Typical Applications

• Embedded memory subsystems  Use as parallel DDR SDRAM where a 512 Mbit memory element organized as 64M × 8 is required for system memory expansion.
• Consumer electronics  Integrate in consumer devices that require synchronous DDR memory with a 133 MHz clock and compact 66-TSSOP footprint.
• Networking and communications equipment  Employ in modules or boards that need defined access times (750 ps) and a 15 ns write cycle for buffer or temporary storage.

Unique Advantages

• Defined density and organization: 512 Mbit capacity arranged as 64M × 8 simplifies memory mapping and address decoding in parallel DDR designs.
• Synchronous DDR performance: 133 MHz clock frequency and 750 ps access time provide predictable timing characteristics for system designers.
• Compact surface-mount package: 66-TSSOP (10.16 mm width) minimizes board area while maintaining a standard, manufacturable footprint.
• Clear power envelope: 2.3 V to 2.7 V supply range defines the device’s power requirements for straightforward power-rail planning.
• Commercial temperature rating: 0°C to 70°C (TA) operating range supports typical commercial applications and environments.

Why Choose IC DRAM 512MBIT PARALLEL 66TSOP?

The MT46V64M8TG-75:D TR provides a straightforward, mid-density DDR SDRAM option for designs that require a 512 Mbit parallel memory element in a compact 66-TSSOP package. Its defined timing (133 MHz clock, 750 ps access time, 15 ns write cycle) and clear power and temperature specifications simplify integration and validation in commercial electronic systems.

Manufactured by Micron Technology Inc., this device is suitable for engineers and procurement teams specifying a predictable, packaged DDR memory component for embedded, consumer, and communications equipment where the listed voltage, temperature, and package parameters match system requirements.

Request a quote or contact sales to discuss availability, lead times, and pricing for the MT46V64M8TG-75:D TR.