MT46V64M8TG-75E:D
| Part Description |
IC DRAM 512MBIT PARALLEL 66TSOP |
|---|---|
| Quantity | 403 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 66-TSOP | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 750 ps | Grade | Commercial | ||
| Clock Frequency | 133 MHz | Voltage | 2.3V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 66-TSSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 64M x 8 | ||
| Moisture Sensitivity Level | 4 (72 Hours) | RoHS Compliance | RoHS non-compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of MT46V64M8TG-75E:D – IC DRAM 512Mbit Parallel 66TSOP
The MT46V64M8TG-75E:D is a 512 Mbit DRAM device implemented as 64M × 8 DDR SDRAM with a parallel memory interface. It delivers defined timing and voltage characteristics for systems that require volatile, high-speed memory in a compact 66-TSSOP package.
Key characteristics include a 133 MHz clock frequency, 750 ps access time, a 15 ns write cycle time (word page), and a supply voltage range of 2.3 V to 2.7 V, with an operating ambient temperature range of 0°C to 70°C.
Key Features
- Memory Architecture 512 Mbit capacity organized as 64M × 8, provided in DRAM format for volatile storage.
- Technology DDR SDRAM implementation supporting a 133 MHz clock frequency.
- Performance / Timing Specified access time of 750 ps and a write cycle time (word page) of 15 ns for predictable timing behavior.
- Voltage / Power Operates from 2.3 V to 2.7 V, enabling low-voltage system integration.
- Interface Parallel memory interface suitable for designs that use parallel DRAM connectivity.
- Package 66-TSSOP package (0.400", 10.16 mm width) for surface-mount PCB designs; supplier device package listed as 66-TSOP.
- Operating Temperature Ambient operating range of 0°C to 70°C (TA).
Unique Advantages
- Compact footprint: The 66-TSSOP package provides a high-density surface-mount option while preserving 512 Mbit memory capacity.
- Defined timing performance: 750 ps access time and 15 ns write cycle time support predictable memory timing requirements in system design.
- Low-voltage operation: 2.3 V–2.7 V supply range enables integration into low-voltage power domains.
- DDR SDRAM architecture: Parallel DDR SDRAM implementation with a 133 MHz clock frequency supports established parallel memory interfaces.
- Temperature-rated for commercial use: Rated for 0°C to 70°C ambient operation to match common commercial application environments.
Why Choose MT46V64M8TG-75E:D?
The MT46V64M8TG-75E:D offers a straightforward DDR SDRAM solution combining 512 Mbit capacity, defined timing parameters, and low-voltage operation in a space-efficient 66-TSSOP package. It is suitable for designs that need a compact, parallel-interface volatile memory with specified access and cycle timings.
Manufactured by Micron Technology Inc., this device is intended for engineers and procurement teams focused on reliable, spec-driven memory integration where package density, timing clarity, and voltage compatibility are key selection criteria.
If you need a quote or further sales information for MT46V64M8TG-75E:D, please request a quote or contact sales to submit your requirements and receive pricing and availability details.
